DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541300009 | THYRISTOR SILICON diffusely, STRUCTURE PNPN, triode, unclosable, INTENDED FOR USE AS A HIGH POWER switching elements, the DC voltage 500 V, DC 150 A, NOT JOM ELECTRICAL | "BETA ELECTRONICS" | REPUBLIC OF INDIA | 3.214 | 371,32 | MOSCOW | ***** | ***** |
2017-11-15 | 8541300009 | THYRISTOR INDUCTOTHERM IP # 147-3182-PE-70SHT., INDUCTOTHERM IP # 147-3176-PE-118SHT. TU 3417-041-41687291-2008. MATERIAL KREMNIY.TEMPERATURA USE <125 degrees. S., slew rate enable current <4A / ISS | ABSENT | REPUBLIC OF INDIA | 298.92 | 37856 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI253-1000-20-A2K3H4-N-110SHT. , TFI373-2000-25-A2E3-N-50pcs., TFI773-2000-25-A2E3-N-30pcs. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 173.3 | 34043,3 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI373-2000-25-A2E3-N-180SHT.,. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 286.2 | 40343,4 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI393-2500-28-A2E3-N-30pcs., TU3417-049-41687291-2011. TFI773-2000-25-A2E3-N-70SHT. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 162.55 | 39480,2 | MOSCOW | ***** | ***** |
2017-11-27 | 8541300009 | THYRISTOR TFI393-2500-28-A2E3-N-30pcs., TU3417-049-41687291-2011. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 81 | 16740 | MOSCOW | ***** | ***** |
2017-11-29 | 8541300009 | THYRISTOR INDUCTOTHERM IP # 147-2185-PE-245SHT. TU 3417-041-41687291-2008. MATERIAL KREMNIY.TEMPERATURA USE <125 degrees. S., slew rate enable current <4A / ISS | ABSENT | REPUBLIC OF INDIA | 131.1 | 16415 | MOSCOW | ***** | ***** |
2017-11-29 | 8541300009 | THYRISTOR TFI253-1000-20-A2K3H4-N-110SHT. , TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 58.85 | 10708,5 | MOSCOW | ***** | ***** |