| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541100009 | (4.2) AUTOMOTIVE ELECTRICAL COMPONENTS, with connecting elements DIODE (C stuffed AT CONTACTS tip) operating amperage 3A, VOLTAGE 50V, are obtained for the maximum operating TEMRERATURY PN TRANSITION PLUS not higher than 150 degrees (4.2) KOMPO | *** | *** | 0.46 | 24,65 | *** | ***** | ***** |
| 2017-09-01 | 8541401000 | Semiconductor light-emitting diodes mounted in a case C TO18 lenses made of special optical glass, operates in the infrared spectral region, Predn. For use as a radiation source in optical analyzers: AX | *** | *** | 0.01 | 735 | *** | ***** | ***** |
| 2017-09-05 | 8541100009 | (4.2) AUTOMOTIVE ELECTRICAL COMPONENTS, with connecting elements DIODE (C stuffed AT CONTACTS tip) operating amperage 3A, VOLTAGE 50V, are obtained for the maximum operating TEMRERATURY PN TRANSITION PLUS not higher than 150 degrees (4.2) KOMPO | *** | RUSSIA | 23.49 | 2063,25 | *** | ***** | ***** |
| 2017-09-08 | 8541500000 | SEMICONDUCTOR THERMOELECTRIC MODULES MANUFACTURED IN THAT IRMF.564269.TU USED IN THE MANUFACTURE OF APPLIANCES, SUBSTITUTE FOR CLAIMS: THERMOELECTRIC MODULES (parameters: voltage U MAX - 26.0 V, THERMAL POWER Q MAX - 182,0 W, Perret | *** | RUSSIA | 99 | 40000 | *** | ***** | ***** |
| 2017-09-12 | 8541100009 | (4.2) AUTOMOTIVE ELECTRICAL COMPONENTS, with connecting elements DIODE (C stuffed AT CONTACTS tip) operating amperage 3A, VOLTAGE 50V, are obtained for the maximum operating TEMRERATURY PN TRANSITION PLUS not higher than 150 degrees (4.2) KOMPO | *** | RUSSIA | 23.49 | 2083,72 | *** | ***** | ***** |
| 2017-09-12 | 8541409000 | LED semiconductor INDICATORS in a plastic case with a cap T6.8, the light segment by GAAS-BASED, the GAP, IN epitaxial planar technology, is designed for visual indication red, yellow, green, white, blue, to light up the CI | *** | RUSSIA | 0.9 | 236,14 | *** | ***** | ***** |
| 2017-09-13 | 8541100009 | DIODES - Silicon diffusion, zener diode and a silicon diode with a Schottky barrier, maximum reverse voltage up to 250V, for industrial applications:: LED Diode "Azon" fine "Azon" 2D102A 225 "emitter" Fine | *** | RUSSIA | 0.09 | 1075,86 | *** | ***** | ***** |
| 2017-09-13 | 8541409000 | CRYSTALS MOSFET MAXIMA-46S in the form of a plate is not cut on a chip - SHT.PREDNAZNACHENY 5600 for use in the OPTOELECTRONIC CIRCUITS MOS RELAY as switching ELEMENTA.DANNYE crystals in Space Instrumentation NOT: IS | *** | RUSSIA | 0.01 | 377,44 | *** | ***** | ***** |
| 2017-09-14 | 8541100009 | DIODES. Designed for use in electrical and electronic devices for general use in DC and AC. Maximum Operating Temperature PN junction from -60 to + 190C. WORKING FROM T = 60C to + 55C. NOT DIODES | *** | RUSSIA | 12.24 | 4155,36 | *** | ***** | ***** |
| 2017-09-15 | 8541500000 | SEMICONDUCTOR THERMOELECTRIC MODULES MANUFACTURED IN THAT IRMF.564269.TU USED IN THE MANUFACTURE OF APPLIANCES, SUBSTITUTE FOR CLAIMS: THERMOELECTRIC MODULES (parameters: voltage U MAX - 26.0 V, THERMAL POWER Q MAX - 182,0 W, Perret | *** | RUSSIA | 72 | 29800 | *** | ***** | ***** |