| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-12 | 8541409000 | LED semiconductor INDICATORS in a plastic case with a cap T6.8, the light segment by GAAS-BASED, the GAP, IN epitaxial planar technology, is designed for visual indication red, yellow, green, white, blue, to light up the CI | *** | RUSSIA | 0.9 | 236,14 | *** | ***** | ***** |
| 2017-09-19 | 8541290000 | Silicon Transistors epitaxial planar structure amplifying NPN, Power dissipation 2W: pos.9 transistor CT 972B, 972B-ART.KT 10pcs .; Pos.10 transistor CT 973B, 973B-ART.KT 10pcs .; USE The power supply current electrode of the instrument: the Concert Hall | *** | RUSSIA | 0.02 | 60,19 | *** | ***** | ***** |
| 2017-09-26 | 8541100009 | DIODES silicon rectifier OUT OF ELECTRICAL civil aircraft AN-32 Diode / SILICON, epitaxial-planar, PULSE, utility intended for use in pulsed devices. The glass housing pigtail | *** | RUSSIA | 0.11 | 213 | *** | ***** | ***** |
| 2017-09-26 | 8541290000 | KAT.PVN 4.2 MATRIX transistor 1NT251 I93.456.000 TU Col.2 PCS POZ.1.38 LIST FOR â„– 2 silicon epitaxial PLANETARY-NPN transistor MATRIX (ASSEMBLY) The metal packages, PREDNAZNOCHENNAYA FOR USE IN RADIO APPARATUS C: AM | *** | RUSSIA | 0.02 | 150,97 | *** | ***** | ***** |
| 2017-11-03 | 8541210000 | Silicon Transistors, NPN epitaxial-planar Structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125C, for industrial applications: | Fine "Azon" | REPUBLIC OF INDIA | 0.156 | 247,93 | MOSCOW | ***** | ***** |
| 2017-11-03 | 8541210000 | 5.2 PROPERTY According to the list â„– 11430.1787: REF. FOR PERSONS. 11 TRANSISTOR 2T201B - 16 PCS. TRANSISTOR silicon epitaxial-planar amplifying LOW FREQUENCY in metal-glass housing, power dissipation 0,15VT COLLECTOR MAXIMUM VOLT | IZOBRAITELNY SIGN of "silicon" | REPUBLIC OF INDIA | 0.016 | 225,43 | MUMBAI PORT | ***** | ***** |