| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-04 | 8542399090 | Wafer HAS NOT cut into the crystal / WITHOUT electromagnet. Gain NERADIATSIONNOSTOYKIE does not contain. COMP-ing, Manuf. FROM superconductivity. MATER., ELECTRICAL CIRCUITS. INT-WIDE SOLID In idle. FORM NOT WASTE CET. NEA, IMAX-10A,:. UMAX-2 | *** | RUSSIA | 5.19 | 11020,18 | *** | ***** | ***** |
| 2017-09-06 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity greater than 512 MBIT: EL.MODUL of RAM 4GB DDR3, is designed to accelerate data exchange with computers, 4 GB and runs at 1866 MHz (COMPLETE WITH A SERVICE | *** | RUSSIA | 0.26 | 64,43 | *** | ***** | ***** |
| 2017-09-08 | 8542327500 | Electronic integrated circuits solid -.. A ferroelectric random access memory, 16KBIT for wide application in industrial equipment NOT MILITARY and consumer electronics (NOT SCRAP TO MARK UPAK Electrical scheme | *** | RUSSIA | 0.07 | 153,68 | *** | ***** | ***** |
| 2017-09-08 | 8542327500 | Electronic integrated circuits solid -.. A ferroelectric random access memory, 256 kb for wide application in industrial equipment NOT MILITARY and consumer electronics (NOT SCRAP TO MARK UPAK CHART ELECT | *** | RUSSIA | 0.03 | 165,5 | *** | ***** | ***** |
| 2017-09-08 | 8542327500 | Electronic integrated circuits monolith - a static random access memory, 4Mb for wide application in industrial equipment NOT MILITARY and consumer electronics (NOT SCRAP ELECTRIC) .: diagram of the electronic | *** | RUSSIA | 0.05 | 73,78 | *** | ***** | ***** |
| 2017-09-16 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity greater than 512 MBIT: EL.MODUL of RAM 4GB DDR3, is designed to accelerate data exchange with computers, 4 GB and runs at 1866 MHz (COMPLETE WITH A SERVICE | *** | RUSSIA | 0.53 | 125,14 | *** | ***** | ***** |
| 2017-09-19 | 8542339000 | Electronic integrated circuits: pos.13 amplifier GITSN5.032.057, ART.GITSN5.032.057 1pc. Designed for amplifying information signals BLOCK central electrode downhole tool 2NT (BK3 + BK5) -A-90-150 / 80 pos.13-AMPLIFIER SPECIFICATIONS | *** | RUSSIA | 0.01 | 873,08 | *** | ***** | ***** |
| 2017-09-21 | 8542399010 | Monolithic integrated SKHEMY- PLATE PBBC ​​STEP 3. PURPOSE - a component of the optical module, for further manufacture of the projection optical modules ELECTRON-OPTICAL COLUMNS lithographic installation. / NOT DUAL-USE, DO NOT: yavl. | *** | RUSSIA | 0.5 | 24003,99 | *** | ***** | ***** |
| 2017-09-26 | 8542323900 | Dynamic random access memory (DRAM) for computers memory capacity over 512 MBIT WITHOUT encryption function (CRYPTOGRAPHY). MEMORY MODULE FOR COMPUTER DIMM DDR4 8GB PC4-17000 (2133MHZ) NCP MEMORY MODULE FOR COMPUTER DIMM DDR4 4GB PC | *** | RUSSIA | 0.56 | 1059,65 | *** | ***** | ***** |
| 2017-09-26 | 8542319010 | MICROPROCESSOR; "IBM"; Integrated circuits Monolithic DIGITAL MOSFETs, are embedded in the computer equipment, the bit processor 64bit, constructs SMD, THIS PRODUCT DOES NOT FUNCTION SHIFROBALNOY (cryptographic) TECHNICAL / used, 2,4GHZ 2.7G | *** | RUSSIA | 1.16 | 5736,81 | *** | ***** | ***** |