| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-13 | 8541409000 | CRYSTALS MOSFET MAXIMA-46S in the form of a plate is not cut on a chip - SHT.PREDNAZNACHENY 5600 for use in the OPTOELECTRONIC CIRCUITS MOS RELAY as switching ELEMENTA.DANNYE crystals in Space Instrumentation NOT: IS | *** | RUSSIA | 0.01 | 377,44 | *** | ***** | ***** |
| 2017-09-19 | 8541500000 | SEMICONDUCTOR DEVICE FOR AUTOMOTIVE ELECTRICAL CIRCUITS:: SENSOR FOR unipolar Hall effect, executed by the mixed technology. Principle of operation of the sensor is based on using Hall effect (ON EXPOSURE TO EXTERNAL MAGNETIC FIELD ON SENSOR | *** | RUSSIA | 0.07 | 0,1 | *** | ***** | ***** |
| 2017-09-22 | 8541100009 | Zener diode is used as a circuit element installations. STABILITRON- wire electrical resistivity to dissipate 100W: STABILITRON- silicon diode is used as a support member in a voltage regulator | *** | RUSSIA | 5.5 | 5654,01 | *** | ***** | ***** |
| 2017-09-22 | 8541300009 | Thyristor modules MT3-130-28-70-FN-1pc., TU 3417-028-41687291-2002 material-silicon. Operating temperature <125 degrees. S., slew rate enable current <4A / ISS applied in power converter: And also in other circuits POST | *** | RUSSIA | 0.3 | 5,95 | *** | ***** | ***** |
| 2017-09-27 | 8541100009 | DIODE MODULE MDD630-36N2-36SHT. TU3417-059-41687291-2012. Material silicon. Operating temperature <125 degrees. S. applied in semiconductor converters of electricity as well as in power circuits and AC VARIOUS: POWER ELEKTRICHES | *** | RUSSIA | 54 | 3065,3 | *** | ***** | ***** |
| 2017-09-27 | 8541300009 | THYRISTOR N0795YN180-1200SHT.TU3417-049-41687291-2011. Material silicon. Operating temperature <125 degrees. . CC slew rate enable current <4A / ISS APPLY energy converter, as well as other circuit constant: and Change | *** | RUSSIA | 120 | 23415,48 | *** | ***** | ***** |
| 2017-09-27 | 8541300009 | THYRISTOR INDUCTOTHERM IP # 172-3219-PE-10 pcs., TU 3417-041-41687291-2008. SILICON MATERIAL. Operating Temperature <125 degrees. S., slew rate enable current <4A / ISS, is applied in the drive: energy as well as in other circuits POST | *** | RUSSIA | 15.9 | 2170 | *** | ***** | ***** |
| 2017-09-27 | 8541100009 | DIODE MODULE INDUCTOTHERM IP # 818531-PE-30pcs. TU 3417-059-41687291-2012. SILICON MATERIAL. Operating temperature <125 degrees. AS USED IN SEMICONDUCTOR POWER CONVERTERS AND ELECTRICAL in power circuits: DEVICE ABM | *** | RUSSIA | 42.6 | 3984,6 | *** | ***** | ***** |
| 2017-09-27 | 8541401000 | Light emitting diodes: Modules light-emitting, which is a printed circuit board with soldered LEDs, INTENDED FOR USE AS Lighting elements in LED lighting equipment. ARE FREE OF COMPONENTS MANUFACTURED: PLA | *** | RUSSIA | 12.42 | 351,56 | *** | ***** | ***** |
| 2017-09-27 | 8541100009 | DIOD 242M for electric circuits WAREHOUSE electric DIOD B25 for electric circuits ELECTRIC WAREHOUSE: NPP "Russian Electronics", RUSSIA Roselectronika 40000 NPP "Russian Electronics" Roselectronika RUSSIA 500 | *** | RUSSIA | 985 | 3110 | *** | ***** | ***** |