DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-04 | 8541100009 | DIODE D063-11500-4-N-75 SHT.TU3417-046-41687291-2008. MATERIAL-KREMNIY.TEMPERATURA USE <125 degrees. S., slew rate enable current <4A / ISS applied in energy converters, and other DC and: variable | *** | RUSSIA | 16.5 | 6675 | *** | ***** | ***** |
2017-09-07 | 8541100009 | DIODES. ARE NOT CROWBAR electrical equipment and dual-use goods: power diodes B10 10A 380V. SILICON, diffusion. FOR WORK IN CHAINS OF STATIC POWER CONVERTERS DC and AC current frequency up to 2 kHz FROM UNKNOWN | *** | RUSSIA | 0.45 | 50,58 | *** | ***** | ***** |
2017-09-12 | 8541100009 | SEMICONDUCTOR DIODES, SILICON-DC converters, MEDIUM 10A forward current, reverse voltage 200V NO MORE, NOT CONTAIN components made of superconducting materials other than semiconductor devices IMAGING:, | *** | RUSSIA | 3.65 | 672,45 | *** | ***** | ***** |
2017-09-21 | 8541100009 | SILICON DIODES, diffusion, LAVINNYE.PREDNAZNACHENY FOR WORK IN CHAINS OF STATIC POWER CONVERTERS DC and AC currents CHASTOAH to 2kHz. (DO NOT light-emitting) DIODES DL161-200-12 Rectifying diodes, pin on currents 200.25 | *** | RUSSIA | 26.5 | 2298,2 | *** | ***** | ***** |
2017-09-27 | 8541100009 | DIODE MODULE MDD630-36N2-36SHT. TU3417-059-41687291-2012. Material silicon. Operating temperature <125 degrees. S. applied in semiconductor converters of electricity as well as in power circuits and AC VARIOUS: POWER ELEKTRICHES | *** | RUSSIA | 54 | 3065,3 | *** | ***** | ***** |
2017-09-27 | 8541100009 | DIODE MODULE INDUCTOTHERM IP # 818531-PE-30pcs. TU 3417-059-41687291-2012. SILICON MATERIAL. Operating temperature <125 degrees. AS USED IN SEMICONDUCTOR POWER CONVERTERS AND ELECTRICAL in power circuits: DEVICE ABM | *** | RUSSIA | 42.6 | 3984,6 | *** | ***** | ***** |
2017-09-29 | 8541100009 | DIODE DF233-100-26-P4-N-6 pcs., TU 3417-060-41687291-2012, D053-7100-4-N-24sht., TU3417-046-41687291-2008, SILICON MATERIAL. Operating temperature <125 degrees. AS USED IN SEMICONDUCTOR POWER CONVERTERS,: AND in power circuits EL | *** | RUSSIA | 4.4 | 1497,79 | *** | ***** | ***** |