DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541300009 | THYRISTOR SILICON diffusely, STRUCTURE PNPN, triode, unclosable, INTENDED FOR USE AS A HIGH POWER switching elements, the DC voltage 500 V, DC 150 A, NOT JOM ELECTRICAL | "BETA ELECTRONICS" | REPUBLIC OF INDIA | 3.214 | 371,32 | MOSCOW | ***** | ***** |
2017-11-03 | 8533210000 | Fixed resistors wirewound, surface mounting, running voltage up to 400V, power less than 5 watts, for industrial applications: | Fine "emitter" | REPUBLIC OF INDIA | 1.552 | 287,08 | MOSCOW | ***** | ***** |
2017-11-03 | 8541290000 | NPN Silicon Transistors MEZAPLANARNY STRUCTURES FOR A switching device and a power supply constant power dissipation is 50W, for industrial applications: 2T839A | Fine "Elter" | REPUBLIC OF INDIA | 0.149 | 84,59 | MOSCOW | ***** | ***** |
2017-11-13 | 8504318008 | SINGLE LOW VOLTAGE POWER TRANSFORMERS, for work in electric power source, the maximum power 8,5VA, Primary voltage 40V, for industrial applications: TPP213-40-400 | Fine "BETA ELECTRONICS" | REPUBLIC OF INDIA | 13.469 | 4256,45 | MOSCOW | ***** | ***** |
2017-11-20 | 8533310000 | Variables resistors WIRE AND SETTINGS Trimmer Multi-turn to work in DC and AC power not exceeding 1 W, for industrial applications: | Fine "NUKLONAS" | REPUBLIC OF INDIA | 0.909 | 157,34 | MOSCOW | ***** | ***** |
2017-11-20 | 8541290000 | BIPOLAR TRANSISTOR SILICON PNP LOW FREQUENCY STRUCTURE, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the CURRENT TRANSISTOR 4MHz, for industrial applications: 2T836A | Fine "Elter" | REPUBLIC OF INDIA | 0.378 | 703,22 | MOSCOW | ***** | ***** |
2017-11-21 | 8504318008 | SINGLE LOW VOLTAGE POWER TRANSFORMERS, for work in electric power source, the maximum power 8,5VA, Primary voltage 40V, for industrial applications: TPP213-40-400 | Fine "BETA ELECTRONICS" | REPUBLIC OF INDIA | 4.99 | 1584,89 | MOSCOW | ***** | ***** |
2017-11-21 | 8541100009 | Diode (zener) Silicon diffusion-alloyed to stabilize the voltage range from 22V to 47B, MAXIMUM SCATTERING POWER 5W OPERATING TEMPERATURE RANGE -60 ... + 125 ° C, FOR USE IN INDUSTRY: D816A | Fine "Azon" | REPUBLIC OF INDIA | 1.085 | 29,09 | MOSCOW | ***** | ***** |