| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-11-01 | 8541300009 | THYRISTOR SILICON diffusely, STRUCTURE PNPN, triode, unclosable, INTENDED FOR USE AS A HIGH POWER switching elements, the DC voltage 500 V, DC 150 A, NOT JOM ELECTRICAL | "BETA ELECTRONICS" | REPUBLIC OF INDIA | 3.214 | 371,32 | MOSCOW | ***** | ***** |
| 2017-11-03 | 8541290000 | NPN Silicon Transistors MEZAPLANARNY STRUCTURES FOR A switching device and a power supply constant power dissipation is 50W, for industrial applications: 2T839A | Fine "Elter" | REPUBLIC OF INDIA | 0.149 | 84,59 | MOSCOW | ***** | ***** |
| 2017-11-03 | 8541500000 | 5.2 PROPERTY According to the list â„– 11430.1780: REF. FOR PERSONS. 29 Photoresistor SF-2-8 - 2 pcs. SEMICONDUCTOR PHOTOCELL, sulfur, cadmium, OPERATING VOLTAGE 100V POWER 0,01VT, is part of the photo-relay, which serves to check the presence torch in T | ABSENT | REPUBLIC OF INDIA | 0.002 | 395,07 | MUMBAI PORT | ***** | ***** |
| 2017-11-03 | 8541210000 | 5.2 PROPERTY According to the list â„– 11430.1787: REF. FOR PERSONS. 11 TRANSISTOR 2T201B - 16 PCS. TRANSISTOR silicon epitaxial-planar amplifying LOW FREQUENCY in metal-glass housing, power dissipation 0,15VT COLLECTOR MAXIMUM VOLT | IZOBRAITELNY SIGN of "silicon" | REPUBLIC OF INDIA | 0.016 | 225,43 | MUMBAI PORT | ***** | ***** |
| 2017-11-03 | 8541300009 | 5.2 PROPERTY According to the list â„– 11430.1786: REF. FOR PERSONS. THYRISTOR T122-32-12 3 - 6 PCS. THYRISTOR LOW FREQUENCY - Semiconductor components are designed to work in power circuits of direct and alternating current frequency to 500Hz, maximum current 3 | Figurative mark PJSC "ELECTROVIPRYAMITEL" | REPUBLIC OF INDIA | 0.06 | 959,87 | MUMBAI PORT | ***** | ***** |
| 2017-11-07 | 8541100009 | 5.2 PROPERTY According to the list â„– 11430.1772: REF. FOR PERSONS. 40, diodes 2D232-50H-10V2 - 8 pcs. Power diodes silicon rectifier at the maximum permissible average forward current of 50A, repetitive peak reverse voltage up to 1600V. INTENDED D | ABSENT | REPUBLIC OF INDIA | 0.176 | 287,53 | PORT Mumbai | ***** | ***** |
| 2017-11-08 | 8541210000 | 5.2 PROPERTY According to the list â„– 11430.1788: REF. FOR PERSONS. 11 TRANSISTOR 2T630B - 5 PCS. Bipolar transistors SILICON maximum power dissipation 0.8W, 120V maximum voltage. Provides control of the current in the output circuit DUE TO CHANGE | ABSENT | REPUBLIC OF INDIA | 0.005 | 108,86 | MUMBAI PORT | ***** | ***** |
| 2017-11-20 | 8541290000 | BIPOLAR TRANSISTOR SILICON PNP LOW FREQUENCY STRUCTURE, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the CURRENT TRANSISTOR 4MHz, for industrial applications: 2T836A | Fine "Elter" | REPUBLIC OF INDIA | 0.378 | 703,22 | MOSCOW | ***** | ***** |
| 2017-11-21 | 8541100009 | Diode (zener) Silicon diffusion-alloyed to stabilize the voltage range from 22V to 47B, MAXIMUM SCATTERING POWER 5W OPERATING TEMPERATURE RANGE -60 ... + 125 ° C, FOR USE IN INDUSTRY: D816A | Fine "Azon" | REPUBLIC OF INDIA | 1.085 | 29,09 | MOSCOW | ***** | ***** |