| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-11-01 | 8541300009 | THYRISTOR SILICON diffusely, STRUCTURE PNPN, triode, unclosable, INTENDED FOR USE AS A HIGH POWER switching elements, the DC voltage 500 V, DC 150 A, NOT JOM ELECTRICAL | "BETA ELECTRONICS" | REPUBLIC OF INDIA | 3.214 | 371,32 | MOSCOW | ***** | ***** |
| 2017-11-03 | 8541290000 | NPN Silicon Transistors MEZAPLANARNY STRUCTURES FOR A switching device and a power supply constant power dissipation is 50W, for industrial applications: 2T839A | Fine "Elter" | REPUBLIC OF INDIA | 0.149 | 84,59 | MOSCOW | ***** | ***** |
| 2017-11-13 | 8541210000 | Silicon Transistors Semiconductor power not exceeding 1 W WITHOUT superconducting and optical elements, the range of operating temperature -60 ... + 125C, for industrial applications: | Fine "Gaul" | PEOPLE'S REPUBLIC OF VIETNAM | 16.334 | 1973,29 | MOSCOW | ***** | ***** |
| 2017-11-14 | 8541100009 | Diode (zener) SILICON, AND PLANAR alloyed, medium and low power, for stabilizing voltage in the range of 8.0 ... 7.5 ... 9.5V and 12V ACCORDINGLY, OPERATING TEMPERATURE RANGE -60 ... + 125C Industrial applications: | Fine "Azon" | PEOPLE'S REPUBLIC OF VIETNAM | 0.404 | 80,35 | MOSCOW | ***** | ***** |
| 2017-11-20 | 8541290000 | BIPOLAR TRANSISTOR SILICON PNP LOW FREQUENCY STRUCTURE, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the CURRENT TRANSISTOR 4MHz, for industrial applications: 2T836A | Fine "Elter" | REPUBLIC OF INDIA | 0.378 | 703,22 | MOSCOW | ***** | ***** |
| 2017-11-21 | 8541401000 | LASER and the LED - low-power semiconductor light sources of visible and near-infrared. They are designed for use mainly in medicine and ecology. / NOT DUAL PURPOSE ARE NOT scrap metal and hazardous waste / | ABSENT | USA | 0.518 | 8650 | MOSCOW | ***** | ***** |
| 2017-11-21 | 8541100009 | Diode (zener) Silicon diffusion-alloyed to stabilize the voltage range from 22V to 47B, MAXIMUM SCATTERING POWER 5W OPERATING TEMPERATURE RANGE -60 ... + 125 ° C, FOR USE IN INDUSTRY: D816A | Fine "Azon" | REPUBLIC OF INDIA | 1.085 | 29,09 | MOSCOW | ***** | ***** |
| 2017-11-24 | 8541290000 | Transistors, solid-state, power dissipation 1 W, NOT SCRAP, NOT FOR F / A TRANSPORTATION NOT FOR RADIATION OF NON MEDICAL NAZNACHENICHYA FOR APPLIANCES SAMSUNG | SAMSUNG GALAXY S | KOREA REPUBLIC OF | 0.01 | 0,01 | MOSCOW | ***** | ***** |
| 2017-11-29 | 8541401000 | LASER and the LED - low-power semiconductor light sources of visible and near-infrared. They are designed for use mainly in medicine and ecology. / NOT DUAL PURPOSE ARE NOT scrap metal and hazardous waste / | ABSENT | USA | 0.528 | 8900 | MOSCOW | ***** | ***** |
| 2017-11-30 | 8541290000 | NPN Silicon Transistors MEZAPLANARNYE STRUCTURE FOR WORK in electronic equipment, Maximum Power Dissipation 50W, for industrial applications: | Fine "BETA ELECTRONICS" | PEOPLE'S REPUBLIC OF VIETNAM | 1.74 | 61,54 | MOSCOW | ***** | ***** |