| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-05 | 8541210000 | TRANSISTOR SEMICONDUCTOR power dissipation 0.31VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC NOT MILITARY): TRANSISTOR SEMICONDUCTOR power dissipation 0.31VT FOR byto | *** | RUSSIA | 0 | 0,39 | *** | ***** | ***** |
| 2017-09-07 | 8541210000 | SPARE PARTS HELICOPTER MI-GA 17: TRANSISTOR CHERT.â„–â„– 2T301ZH OS 10pc, 10pc P307V OS, OS-MP101B 6pc, 2P350A-20pcs, P309OS-20pcs, 2P301B-20pcs, 2P303D-20pcs....... , power dissipation 0,15VT, 0,2VT And 0,25VT to work in radio equipment helicopter: Mark | *** | RUSSIA | 0.78 | 986,44 | *** | ***** | ***** |
| 2017-09-08 | 8541210000 | TRANSISTOR SEMICONDUCTOR power dissipation 0.25 W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). NO MILITARY: TRANSISTOR SEMICONDUCTOR power dissipation 0.25 W for TO | *** | RUSSIA | 0.08 | 35,31 | *** | ***** | ***** |
| 2017-09-13 | 8541210000 | TRANSISTOR SEMICONDUCTOR power dissipation 0.65VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). NO MILITARY: TRANSISTOR SEMICONDUCTOR power dissipation 0.65VT FOR byto | *** | RUSSIA | 0.27 | 94,54 | *** | ***** | ***** |
| 2017-09-15 | 8541210000 | TRANSISTOR SEMICONDUCTOR power dissipation of 0.625 W for consumer electronics, audio and video. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC) NO MILITARY: TRANSISTOR SEMICONDUCTOR power dissipation | *** | RUSSIA | 0.61 | 62,01 | *** | ***** | ***** |
| 2017-09-19 | 8541210000 | Silicon Transistors Semiconductor power not exceeding 1 W WITHOUT superconducting and optical elements, the range of operating temperature -60 ... + 125C, for industrial applications:: Transistors Transistors TRANSISTOR Transit | *** | RUSSIA | 6.74 | 1543,27 | *** | ***** | ***** |
| 2017-09-22 | 8541210000 | MODULE TRANSISTOR SEMICONDUCTOR power dissipation 0,96VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). NO MILITARY: MODULE SEMICONDUCTOR TRANSISTORS Power Dissipation | *** | RUSSIA | 0 | 15,63 | *** | ***** | ***** |
| 2017-09-22 | 8541210000 | TRANSISTOR SEMICONDUCTOR power dissipation 0,36VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). NO MILITARY: TRANSISTOR SEMICONDUCTOR power dissipation 0,36VT FOR byto | *** | RUSSIA | 0.02 | 18,98 | *** | ***** | ***** |
| 2017-09-22 | 8541210000 | TRANSISTOR SEMICONDUCTOR power dissipation 0,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). NO MILITARY: TRANSISTOR SEMICONDUCTOR power dissipation 0,225VT FOR LIFE | *** | RUSSIA | 0.35 | 132,56 | *** | ***** | ***** |
| 2017-09-28 | 8541210000 | TRANSISTORS FOR ELECTRIC DEVICES power transistor 0,23VT: 0,15VT power transistor power transistor 0,50VT "ZAVOD ISKRA", OJSC "Saratov factory reception-intensifying lamps": OAO "ZAVOD ISKRA", OJSC "Saratov factory acceptance-SII | *** | RUSSIA | 0.65 | 129,85 | *** | ***** | ***** |