DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-11-01 | 8541300009 | THYRISTOR SILICON diffusely, STRUCTURE PNPN, triode, unclosable, INTENDED FOR USE AS A HIGH POWER switching elements, the DC voltage 500 V, DC 150 A, NOT JOM ELECTRICAL | "BETA ELECTRONICS" | REPUBLIC OF INDIA | 3.214 | 371,32 | MOSCOW | ***** | ***** |
2017-11-03 | 8541210000 | Silicon Transistors, NPN epitaxial-planar Structure for use in amplifiers, pulse and switching devices, the range of operating temperature -60 ... + 125C, for industrial applications: | Fine "Azon" | REPUBLIC OF INDIA | 0.156 | 247,93 | MOSCOW | ***** | ***** |
2017-11-03 | 8541290000 | NPN Silicon Transistors MEZAPLANARNY STRUCTURES FOR A switching device and a power supply constant power dissipation is 50W, for industrial applications: 2T839A | Fine "Elter" | REPUBLIC OF INDIA | 0.149 | 84,59 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI393-2500-28-A2E3-N-30pcs., TU3417-049-41687291-2011. TFI253-1000-20-A2K3H4-N-110SHT. , TFI373-2000-25-A2E3-N-230SHT., TFI773-2000-25-A2E3-N-100 pieces. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. FROM. | The uppercase E crossed-T | REPUBLIC OF INDIA | 622.05 | 113866,9 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI253-1000-20-A2K3H4-N-110SHT. , TFI373-2000-25-A2E3-N-50pcs., TFI773-2000-25-A2E3-N-30pcs. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 173.3 | 34043,3 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI373-2000-25-A2E3-N-180SHT.,. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 286.2 | 40343,4 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR TFI393-2500-28-A2E3-N-30pcs., TU3417-049-41687291-2011. TFI773-2000-25-A2E3-N-70SHT. TU3417-045-41687291-2008. Material silicon. Operating temperature <125 degrees. S. slew rate enable current <4A / ISS | The uppercase E crossed-T | REPUBLIC OF INDIA | 162.55 | 39480,2 | MOSCOW | ***** | ***** |
2017-11-20 | 8541290000 | BIPOLAR TRANSISTOR SILICON PNP LOW FREQUENCY STRUCTURE, constant power dissipation to 5 watts to the heat sink, the cutoff frequency gain of the CURRENT TRANSISTOR 4MHz, for industrial applications: 2T836A | Fine "Elter" | REPUBLIC OF INDIA | 0.378 | 703,22 | MOSCOW | ***** | ***** |
2017-11-20 | 8541300009 | THYRISTOR SILICON, diffusion, structure PNPN, for use as a switching element, maximum reverse voltage up to 500V, for industrial applications: KU108ZH | Fine "BETA ELECTRONICS" | REPUBLIC OF INDIA | 0.354 | 55,54 | MOSCOW | ***** | ***** |
2017-11-21 | 8541100009 | Diode (zener) Silicon diffusion-alloyed to stabilize the voltage range from 22V to 47B, MAXIMUM SCATTERING POWER 5W OPERATING TEMPERATURE RANGE -60 ... + 125 ° C, FOR USE IN INDUSTRY: D816A | Fine "Azon" | REPUBLIC OF INDIA | 1.085 | 29,09 | MOSCOW | ***** | ***** |