DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-17 | 8541300009 | Thyristor with peak off-state voltage to 600V 8-A thyristor "TS820-600T" C INCLUSION sensitivity level, GATE CIRCUIT CURRENT 0.2 milliamperes; SCR "P0102MN 5AA4" With SHOCK WHEN OPEN TO 0.8A, Voltage | ST | *** | 82.3 | 8163 | ST PETERSBURG | ***** | ***** |
2017-09-17 | 8541290000 | MOSFET N-CHANNEL "TK6A65D (STA4, Q, M)" C dissipation 45W, drain-source voltage 650V, DIRECT CURRENT FLOW 6A. Designed for use in switching regulator VOLTAGE. TYPE SEMICONDUCTOR - SILICON. | TOSHIBA | *** | 185.92 | 13205 | ST PETERSBURG | ***** | ***** |
2017-11-10 | 8541290000 | MOSFET N-CHANNEL "TK6A65D (STA4, Q, M)" C dissipation 45W, drain-source voltage 650V, DIRECT CURRENT FLOW 6A. Designed for use in switching regulator VOLTAGE. TYPE SEMICONDUCTOR - SILICON. | TOSHIBA | *** | 205.65 | 15362,15 | ST PETERSBURG | ***** | ***** |
2017-11-27 | 8541290000 | MOSFET N-CHANNEL: "TK6A65D (STA4, Q, M)" C dissipation 45W, drain-source voltage 650V, DIRECT CURRENT FLOW 6A; "TK18A30D, S5X (M" Since power dissipation 45W, drain-source voltage 300V, DIRECT CURRENT FLOW 18A; Designed | TOSHIBA | *** | 435.065 | 32170,9 | ST PETERSBURG | ***** | ***** |
2017-11-27 | 8541300009 | Thyristors with a peak off-state voltage to 600V: SCR "P0102MN 5AA4" With SHOCK WHEN OPEN TO 0.8A, 0.8V gate voltage. TYPE SEMICONDUCTOR - SILICON. | ST | *** | 4.2 | 2286,68 | ST PETERSBURG | ***** | ***** |
2017-11-28 | 8541100009 | DIODES: - pulse rectification "MRA4003T3G" With 1.1V forward voltage, amperage 1A; - DOUBLE PULSE SWITCHING "BAV99,215" with a max. Reverse Voltage 70V, max. Direct current of 450 milliamperes; TYPE SEMICONDUCTOR - SILICON. | ON SEMICONDUCTOR | *** | 0.965 | 186,63 | ST PETERSBURG | ***** | ***** |