DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-05 | 8542399090 | ELECTRONIC CIRCUIT, Integrated and hybrid contains. Passive components (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate products used PANEL Electronic integrated circuits | *** | ITALY | 0.12 | 188,04 | *** | ***** | ***** |
2017-09-05 | 8542399090 | ELECTRONIC CIRCUIT, Integrated and hybrid contains. Passive components (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate products used PANEL Electronic integrated circuits | *** | ITALY | 0.12 | 184,38 | *** | ***** | ***** |
2017-09-13 | 8542399090 | ELECTRONIC CIRCUITS, Integrated and hybrid, SODERZH.PASSIVNYE elements (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate is inserted into a diagram of an electronic integrals | *** | ITALY | 0.09 | 179,92 | *** | ***** | ***** |
2017-09-13 | 8542399090 | ELECTRONIC CIRCUITS, Integrated and hybrid, SODERZH.PASSIVNYE elements (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate is inserted into a diagram of an electronic integrals | *** | ITALY | 0.01 | 12,58 | *** | ***** | ***** |
2017-09-16 | 8542321000 | REMEMBERING ustrystv in the form of multichip integrated circuit consisting of two OR MORE interconnected monolithic integrated circuit, UNITED INSEPERABLY into a whole: FLASH MEMORY 128MBIT 75NS 56. PHYSICAL MEMORY 128MB; ACCESS TIME 75 | *** | CHINA | 2.34 | 8780,54 | *** | ***** | ***** |
2017-09-16 | 8542321000 | REMEMBERING ustrystv in the form of multichip integrated circuits consisting of two or MORE interconnected monolithic integrated circuits, INSEPERABLY United into a single unit: DRAM MEMORY 256MBIT 133MH. Memory capacity 250MB; Memory Organization | *** | CHINA | 2.46 | 1343,76 | *** | ***** | ***** |
2017-09-20 | 8542399090 | ELECTRONIC CIRCUIT, Integrated and hybrid contains. Passive components (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate products used PANEL Electronic integrated circuits | *** | TAIWAN CHINA | 0.09 | 180,27 | *** | ***** | ***** |
2017-09-20 | 8542399090 | ELECTRONIC CIRCUITS, Integrated and hybrid, SODERZH.PASSIVNYE elements (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate is inserted into a diagram of an electronic integrals | *** | TAIWAN CHINA | 0.01 | 12,61 | *** | ***** | ***** |
2017-09-20 | 8542399090 | ELECTRONIC CIRCUIT, Integrated and hybrid contains. Passive components (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate products used PANEL Electronic integrated circuits | *** | TAIWAN CHINA | 0.1 | 348,06 | *** | ***** | ***** |
2017-09-20 | 8542399090 | ELECTRONIC CIRCUITS, Integrated and hybrid, SODERZH.PASSIVNYE elements (resistors, capacitors) and active elements (diodes, integrated circuits, transistors, semiconductors) to collect at releasably on a single insulating substrate, is embedded in integrated circuits for paaneah | *** | ITALY | 0 | 12,93 | *** | ***** | ***** |