DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 3818001000 | Monocrystalline wafers FROM phosphorus-doped silicon, are not processed. PROVIDED FOR FURTHER multi-stage process in the manufacturing in order to obtain suitable vehicle for the manufacture of solar cells, NOT MILITARY: NEOBRAB | *** | CHINA | 1062 | 96019,44 | *** | ***** | ***** |
2017-09-18 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; METHOD OF GROWING: CZ; CONDUCTIVITY TYPE: N; Went | *** | CHINA | 14.4 | 2955,47 | *** | ***** | ***** |
2017-09-18 | 3818001000 | DOPED SILICON, purification, monocrystalline, plate-shaped, polished, gratuitous POSTAKVA AS SAMPLES: silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; MET | *** | CHINA | 18 | 3789,85 | *** | ***** | ***** |
2017-09-20 | 3818001000 | Silicon wafer polishing, doped monocrystalline, electronics; Packed in CARTRIDGES / PO 25 PCS / VACUUM PACKAGES paved cardboard and foam insert: 6 "(150mm) of the plate (Appendix 85), the conductivity type N, DIAM.150 +/- 0.20 | *** | CHINA | 33.44 | 24076,5 | *** | ***** | ***** |
2017-09-22 | 3818001000 | Monocrystalline wafers FROM phosphorus-doped silicon, are not processed. PROVIDED FOR FURTHER PROCESSING FOR MULTI-STAGE PRODUCTION, GROSS WEIGHT from the pallet - 12258.000 KG raw plate of monocrystalline silicon N-TYPE SIZE | *** | CHINA | 10762 | 875375,05 | *** | ***** | ***** |
2017-09-29 | 3818001000 | Monocrystalline wafers FROM phosphorus-doped silicon, are not processed. PROVIDED FOR FURTHER PROCESSING FOR MULTI-STAGE PRODUCTION, GROSS WEIGHT from the pallet - 12258.000 KG raw plate of monocrystalline silicon N-TYPE SIZE | *** | CHINA | 10233.6 | 875376,2 | *** | ***** | ***** |
2017-11-03 | 3818001000 | Silicon wafer polishing, doped monocrystalline, electronics; PACKED IN TAPE / FOR 25 PCS / vacuum bags, cardboard, and pave the foam insert: | MCL ELECTRONIC MATERIALS, LTD | CHINA | 56.238 | 34398 | MOSCOW | ***** | ***** |
2017-11-03 | 3818001000 | Monocrystalline wafers FROM phosphorus-doped silicon, not processed, POSTAVLYAYUTCYA FOR FURTHER PROCESSING FOR MULTI-STAGE PRODUCTION, GROSS WEIGHT from the pallet - 11533.60 KG | ABSENT | CHINA | 10233.6 | 875372,94 | XI'AN | ***** | ***** |
2017-11-08 | 3818009000 | CHEMICAL COMPOUNDS doped for use in electronics - epitaxial wafers: 2-inch GREEN INGAN, WAVELENGTH 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 MCD - 2 PCS. Epitaxial CM. complete | ABSENT | CHINA | 0.16 | 1162,07 | Maanshan | ***** | ***** |
2017-11-12 | 3818001000 | Silicon wafer polishing, doped monocrystalline, electronics; PACKED IN TAPE / FOR 25 PCS / vacuum bags, cardboard, and pave the foam insert: | MCL ELECTRONIC MATERIALS, LTD | CHINA | 15.372 | 15400 | MOSCOW | ***** | ***** |