Afe Import Data of Russia

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Find trade data and market research report on afe imports under HS Code 3818001000 and follow up market price of afes. Know market share of companies importing afe under HS Code 3818001000

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-06	3818001000	Monocrystalline wafers FROM phosphorus-doped silicon, are not processed. PROVIDED FOR FURTHER multi-stage process in the manufacturing in order to obtain suitable vehicle for the manufacture of solar cells, NOT MILITARY: NEOBRAB	***	CHINA	1062	96019,44	***	*****	*****
2017-09-07	3818001000	DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 PP + R10-13 / T5.5-6.5 diameter 200 mm, P + type (boron doped). INTENDED FOR USE IN THE PRODUCTION OF INTEGRATED CIRCUITS. SUM	***	JAPAN	2.6	4111,39	***	*****	*****
2017-09-07	3818001000	SILICON MONOKRISTALICHESKY doped In WAFERS without departing: IES 100 0.01 (111) -2500SHT, EFC 100 3-30 (111) -907SHT, KDB 100 0.03 (111) -150SHT... OOO "PROLOGUE SEMIKOR" Ukraine there is no 0	***	UKRAINE	72.1	28038,5	***	*****	*****
2017-09-11	3818001000	High-resistivity silicon wafer. Diameter of 100 mm, thickness of 460 microns. SOURCE MATERIAL FOR MANUFACTURING CRYSTAL INTEGRATED CIRCUITS: GREAT ASCENT INTERNATIONAL LIMITED GREAT ASCENT INTERNATIONAL LIMITED 100	***	JAPAN	2.4	7170	***	*****	*****
2017-09-18	3818001000	DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; METHOD OF GROWING: CZ; CONDUCTIVITY TYPE: N; Went	***	CHINA	14.4	2955,47	***	*****	*****
2017-09-18	3818001000	DOPED SILICON, purification, monocrystalline, plate-shaped, polished, gratuitous POSTAKVA AS SAMPLES: silicon wafer MKRSY00B, 150MM, N-TYPE, <100>, PHOSPHORUS, 3,6 - 5,4 OHM-CM, 675 +/- 15UM, PRIME WAFER; Diameter: 150 mm; MET	***	CHINA	18	3789,85	***	*****	*****
2017-09-20	3818001000	Silicon wafer polishing, doped monocrystalline, electronics; Packed in CARTRIDGES / PO 25 PCS / VACUUM PACKAGES paved cardboard and foam insert: 6 "(150mm) of the plate (Appendix 85), the conductivity type N, DIAM.150 +/- 0.20	***	CHINA	33.44	24076,5	***	*****	*****
2017-09-22	3818001000	DOPED SILICON, purification, monocrystalline, plate-shaped, polished: Silicon wafer SI D200 P CZ100 R12 T725 WP07 is purified SILICON, monocrystalline, plate-shaped diameter 200 mm, p type (boron-doped) P	***	JAPAN	15.9	12861,65	***	*****	*****
2017-09-22	3818001000	Monocrystalline wafers FROM phosphorus-doped silicon, are not processed. PROVIDED FOR FURTHER PROCESSING FOR MULTI-STAGE PRODUCTION, GROSS WEIGHT from the pallet - 12258.000 KG raw plate of monocrystalline silicon N-TYPE SIZE	***	CHINA	10762	875375,05	***	*****	*****
2017-09-25	3818001000	Silicon-doped (doping with phosphorus): a single-crystal (Czochralski method) of silicon wafers WAFER TYPE M2 156 HN84W WBC FAS180 -734400 PCS for use in the production of solar modules:. FORM: PSEVDOKVADRAT (rounded corners) edge length:	***	NORWAY	7565	640749,3	***	*****	*****

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