| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541290000 | Other transistors, phototransistors EXCEPT: TRANSISTOR, low-voltage power MOSFET, CASING - TO-263-3, QTY CHANNELS - 1 BREAKDOWN VOLTAGE CURRENT-SOURCE - - 40 V, DC CURRENT LEAKAGE / FLOW - - 100 A, RESISTANCE CURRENT-SOURCE - 3.5 mOHMS, VOLTAGE | *** | CHINA | 1.6 | 1704,5 | *** | ***** | ***** |
| 2017-09-02 | 8541290000 | TRANSISTORS EXCEPT phototransistor NO ELECTRICAL BREAKAGE: BOARD IGBT FS300R12KE3 / AGDR-72C S, THREE transistor power dissipation 360W rated voltage: 1200 V, current: 300A. Designed to control CONVERSION | *** | FINLAND | 2.53 | 1816,88 | *** | ***** | ***** |
| 2017-09-04 | 8541210000 | TRANSISTOR, P / N NX3008NBKS, MOS transistors, the number of channels 2, the breakdown voltage of the drain-source 30, continuous current LEAKAGE 350 MA - 1,4 SOURCE DRAIN RESISTANCE OM VOLTAGE gate-source 8, the minimum operating temperature - 55 C, MAX: Working | *** | PHILIPPINES | 0.24 | 606,13 | *** | ***** | ***** |
| 2017-09-04 | 8541290000 | TRANSISTOR FOR SEMICONDUCTOR PCB mounting. 1. The number of channels drain-source voltage of 30 V .: gate-source voltage of 2.2 V. 39 CONTINUOUS LEAKAGE CURRENT AMP. Resistance Drain-10 IOM. Power dissipation 28 VT.DIAPAZON THOSE WORKERS | *** | GERMANY | 0.08 | 1,95 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | Power MOSFET "STD12NF06LT4" Series, STRIP FETT With 30W power dissipation, drain-source voltage 60V, gate-source voltage 16V, continuous leakage current of 12A intended for use in the device switching. TYPE SEMICONDUCTOR: MOS | *** | CHINA | 1.28 | 754,38 | *** | ***** | ***** |
| 2017-09-05 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source 950, CURRENT LEAKAGE 38 A, the power dissipation | *** | TAIWAN CHINA | 0.16 | 186,68 | *** | ***** | ***** |
| 2017-09-06 | 8541100009 | SEMICONDUCTOR protective diode, a separate crystal into the housing without departing NOT BREAKAGE: ST MICROELECTRONICS ST MICROELECTRONICS BZW04-5V8B BZW04-5V8B BZW04-5V8B 4000 | *** | CHINA | 1 | 364,18 | *** | ***** | ***** |
| 2017-09-06 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. Breakdown voltage of the drain-source of 200 V, 372 A LEAKAGE CURRENT, power dissipation | *** | PHILIPPINES | 36 | 10731 | *** | ***** | ***** |
| 2017-09-06 | 8541290000 | TRANSISTORS EXCEPT phototransistors used in the system INDUSTRIAL ELECTRONICS MOSFET Channels N IS USED FOR THE INDUSTRIAL ELECTRONICS DEVICES. VOLTAGE Drain-Source Breakdown 70 V, 35 A LEAKAGE CURRENT, POWER 40 CS. lint | *** | TAIWAN CHINA | 18.8 | 5141,75 | *** | ***** | ***** |
| 2017-09-09 | 8541401000 | Light emitting diodes, CIVIL APPLICATION FOR DENTAL EQUIPMENT CLASSIFICATION CODE 94 5220 LED to the tip of Dental AIR SERIES DYNALED M600LG M4. Light guide LED ESSY For dental micromotor NLX NANO NAKANISHI INC. N | *** | JAPAN | 0.04 | 1332,39 | *** | ***** | ***** |