| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-04 | 8541100009 | Semi-conductor, for use in the installation of electrical circuits, yavl. CROWBAR EL / EQUIPMENT - Rectifying diodes in a ceramic housing, TYPE SEMICONDUCTOR - single-element rectifying the PIN, VOLTAGE 50V, 0.2A MAKS.TOK, RAB.TEMP. - 135 | *** | CHINA | 0.31 | 14,67 | *** | ***** | ***** |
| 2017-09-05 | 8541401000 | Light emitting diodes (COMPONENT electrical equipment non-domestic) MAKS.PRYAMOE VOLTAGE. 2.5, MAKS.PRYAMOY 30 mA, the color of light: red, green, yellow, blue, orange for PRIM. IN DIFFERENT opto-electronic equipment, 3 cards. Boxes. CO SPETS.MARK. + DIODES | *** | CHINA | 25.2 | 6882,54 | *** | ***** | ***** |
| 2017-09-05 | 8541401000 | Light-emitting diodes FOR MONITORING STATION PH SAFE SENS TRAKSTATION unit conversion TRAKPOD PRESENTS highly specialized devices with two objectives: 1. The EMIT SENSOR SIGNAL LIGHT SV2 initializes two wavelengths - 600 nm, and 568 NM (LE | *** | CHINA | 1.07 | 1824,01 | *** | ***** | ***** |
| 2017-09-07 | 8541100009 | DIODES: FLAT Small signal semiconductor diodes "LL4148-GS08" On the maximal periodic reverse voltage 100V and periodic peaks direct current to 500 mA. TYPE SEMICONDUCTOR - SILICON. : Small signal semiconductor diodes HELD | *** | CHINA | 57.2 | 3579,6 | *** | ***** | ***** |
| 2017-09-07 | 8541409000 | Photosensitive semiconductor devices INDUSTRIAL APPLICATIONS, INCLUDING: PCP with transistor output HOUSING SOP-4, gain of the CURRENT 50-300% MAKS.NAPRYAZH. Collector-emitter voltage 70VDC, MAKS.TOK COLLECTOR low as 0.05 A., MAKS.VH.TOK 0.05 | *** | CHINA | 4 | 627,23 | *** | ***** | ***** |
| 2017-09-07 | 8541290000 | TRANSISTORS WITH POWER OVER dissipation 1W AND NOT NOT photo- and light emitting, INDUSTRIAL APPLICATIONS INCLUDING: P-channel field effect transistor with insulated gate HOUSING (TO-263), MAKS.NAPRYAZH. Drain-Source -60VDC, RAB.TOK Photo - 110A, Rab | *** | CHINA | 0.56 | 2848,79 | *** | ***** | ***** |
| 2017-09-11 | 8541210000 | TRANSISTORS EXCEPT phototransistor dissipation of less than 1 W / NOT JOM ELECTRICAL DIODE (MOS TRANSISTOR N-CHANNEL, VDS - breakdown voltage of the drain-source 60 V, ID - CONSTANT CURRENT LEAKS: 360 MA, RDS ON - RESISTANCE OF DRAIN-SOURCE: 1.6 OHMS, QG - | *** | CHINA | 0.4 | 342,09 | *** | ***** | ***** |
| 2017-09-17 | 8541290000 | MOS TRANSISTOR N-CHANNEL. Maximum power dissipation (PD) 5 VT "MAXIMUM drain-source voltage 75 VMAKSIMALNOE gate-source voltage 20 VSOPROTIVLENIE CHANNEL The OPEN IOM 35" FAIRCHILD SEMICONDUCTOR FAIRCHILD FDP047AN08A0 200 | *** | CHINA | 0.5 | 541,17 | *** | ***** | ***** |
| 2017-09-17 | 8541290000 | MOS TRANSISTOR N-CHANNEL. Maximum power dissipation (PD) 5 VT "MAXIMUM drain-source voltage U SI V100MAKSIMALNOE gate-source voltage U MAX GI., V20SOPROTIVLENIE CHANNEL The OPEN ON SI R., MOM35" FAIRCHILD SEMICONDUCTOR F | *** | CHINA | 1 | 1788 | *** | ***** | ***** |
| 2017-09-24 | 8541290000 | TRANSISTORS Power Dissipation 1.2 W: APPLY TO RELAY POVOROTA.VID POLUPROVODNIKA- SILICON. TYPE OF TRANSITION - N-CHANNEL MOSFET .MOSCHNOST PTOT DISPERSION OVER 1 W.RABOCHEE VOLTAGE TO CURRENT 100V.MAKSIMALNY 80 A. USED FOR THE PRODUCTION | *** | CHINA | 0.83 | 1030 | *** | ***** | ***** |