Alarm Import Data of Russia

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Find trade data and market research report on alarm imports under HS Code 8541210000 and follow up market price of alarms. Know market share of companies importing alarm under HS Code 8541210000

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-01	8541210000	N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit	***	GERMANY	0.2	639,29	***	*****	*****
2017-09-02	8541210000	TRANSISTORS Power Dissipation 0.3W TYPE SEMICONDUCTOR SILICON-: APPLY TO ALARM CAR VAZ.VID SEMICONDUCTOR - KREMNIEVYY.VID TRANSITION - NPN Used to production purposes, not for retail sale .. NXP	***	THAILAND	0.05	153,06	***	*****	*****
2017-09-07	8541210000	N-channel MOS transistors operating under saturated ASSEMBLY WITH BLOCKS temperature protection, overcurrent protection and voltage is intended to distribute power to the Car Alarm System MOSFET drain-source voltage Transit	***	TAIWAN CHINA	0.71	3172,74	***	*****	*****
2017-09-10	8541210000	TRANSISTORS Power Dissipation 0.3W TYPE SEMICONDUCTOR SILICON-: Used in car alarms, TYPE SEMICONDUCTOR - SILICON. Transition type - NPN / PNP..ISPOLZUETSYA for production purposes, not for retail sale .. NXP SEMICONDUCT	***	CHINA	0.38	997,5	***	*****	*****
2017-09-14	8541210000	N-channel MOS transistor, INTENDED FOR POWER DISTRIBUTION SYSTEMS car alarms MOSFET maximum constant drain-source voltage of 20 V, the power dissipation MILIVT 430 (0.43 BT), the maximum drain current 2,8A, CDF	***	TAIWAN CHINA	0.58	927,63	***	*****	*****
2017-09-14	8541210000	N-channel MOS transistor, INTENDED FOR POWER DISTRIBUTION SYSTEMS car alarms MOSFET maximum constant drain-source voltage 60V, power dissipation MILIVT 150 (0,15VT), the maximum drain current 0.3A, Bldg	***	TAIWAN CHINA	0.3	162,72	***	*****	*****
2017-09-17	8541210000	TRANSISTORS Power Dissipation 0.3W TYPE SEMICONDUCTOR SILICON-: APPLY TO ALARM CAR VAZ.VID SEMICONDUCTOR SILICON, transition type NPN.ISPOLZUETSYA for production purposes, NOT FOR RETAIL PRODAZHI.PROTESTIRO	***	CHINA	0.07	411,48	***	*****	*****
2017-09-17	8541210000	TRANSISTORS Power Dissipation 0.15 W TYPE SEMICONDUCTOR SILICON-: APPLY IN THE WARNING FIRE ALARM. P TOT = 150MW.VID SEMICONDUCTOR - SILICON. Transition type - NPN ..ISPOLZUETSYA for production purposes, NOT FOR RETAIL PR	***	CHINA	0.02	305,16	***	*****	*****
2017-09-20	8541210000	N-channel MOS transistor, INTENDED FOR POWER DISTRIBUTION SYSTEMS car alarms MOSFET maximum constant drain-source voltage 60V, power dissipation MILIVT 150 (0,15VT), the maximum drain current 0.3A, Bldg	***	CHINA	0.3	162,41	***	*****	*****
2017-09-22	8541210000	Semiconductor device designed for assembly alarm system: TRANSISTORS power dissipation less than 1 watt, different models - 355000 PCS: OWEIS ELECTRONICS CO, LTD is not designated is not designated 0.	***	CHINA	39.5	2437,94	***	*****	*****

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Our alarm import data of Russia and market research report covers market priceof alarm and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of alarm in Russia. Few shipment records with a small number of important columns from Russia import data of alarm are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of alarm. To view more shipment records of alarm import data of Russia, you can set a filter by Country Name, HS Code and Place.

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