| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-04 | 3818001000 | SILICON MONOKRISTALICHESKY, alloyed plate DO NOT WASTE: 100mm P <100> 12 OHM * CM-300SHT. : "PAI HAUNG TECHNOLOGY CO," Taiwan. ABSENT. 0 | *** | TAIWAN CHINA | 7.2 | 4129,37 | *** | ***** | ***** |
| 2017-09-04 | 3818001000 | Silicon is alloyed with a disc-shaped. Dopant (impurity) -Bor (B) .Use AS UPPER ELECTRODE FOR CAMERA SETTINGS pickling REACTIVE ION ETCHING PLASMA OXIDE SILICONE LAM RAINBOW 4520, which is used for VIA ELE | *** | UNITED STATES | 1.2 | 2786,91 | *** | ***** | ***** |
| 2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.17 | 3617,25 | *** | ***** | ***** |
| 2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 2 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.03 | 1559,25 | *** | ***** | ***** |
| 2017-09-11 | 3818001000 | SILICON MONOKRISTALICHESKY, alloyed plate DO NOT WASTE: 4 "N <100> 40 OHMCM (FZ) -985SHT:.. Plant SILTRONIK AG, GERMANY NONE 0 | *** | GERMANY | 12 | 18566,59 | *** | ***** | ***** |
| 2017-09-12 | 3818001000 | Silicon is alloyed with a plate round shapes of different diameters, for use in electronics for the production of photovoltaic converters and SOLID-STATE ELECTRONIC DEVICES: //-ART.RLM500-01 - 218SHT, ART.RLM501-01 - 216SHT | *** | JAPAN | 27 | 1354,08 | MOSCOW | ***** | ***** |
| 2017-09-29 | 3818001000 | Silicon is alloyed with a disc-shaped, intended for use in electronics: the electrode in the form of a disc diameter of 8 "is used in etching of dielectric Electronic devices LAM AT surface of the semiconductor silicon wafers LAM MATERIAL. KRE | *** | TAIWAN CHINA | 7.44 | 12575,52 | *** | ***** | ***** |
| 2017-11-07 | 3818009000 | Epitaxial structures alloyed, in the form of discs, for the manufacture of solar cells, the goods can be opened in the premises under sterile conditions class 8 and above: | ABSENT | GERMANY | 117.192 | 785461,67 | KRASNODAR | ***** | ***** |
| 2017-11-07 | 3818009000 | CHEMICAL COMPOUNDS Alloy: a semiconductor substrate of gallium arsenide, ligated silicon, the conductivity type N, the circular plate 2 inch diameter (50.8 mm), thickness 350 microns, INTENDED FOR USE IN MICROELECTRONICS | WITHOUT A TRADEMARK | *** | 0.272 | 5145 | ST PETERSBURG | ***** | ***** |
| 2017-11-08 | 3818001000 | Silicon is alloyed, purity, single-crystal, plate-shaped, polished, for use in microelectronics: | MCL | CHINA | 139.05 | 79916,75 | MOSCOW | ***** | ***** |