DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542323900 | MICROCHIP electronic integrated monolithic, dynamic random access memory (DRAM) with a storage capacity of 4 GB which do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP elect., For the promo. ASSEMBLY TECHNOLOGY "SAMSUNG" Microcircuits integrated MES | *** | KOREA REPUBLIC OF | 47.2 | 62423,07 | *** | ***** | ***** |
2017-09-01 | 8542323900 | MICROCHIP Electronic integrated circuits, monolithic (dynamic random access memory (DRAM) with a storage capacity of 2 Gbit having no encryption function (CRYPTOGRAPHY) NOT SCRAP Electrics., For the industrial assembly EQUIPMENT "SAMSUNG" Integrated Circuits | *** | KOREA REPUBLIC OF | 20 | 112520,48 | *** | ***** | ***** |
2017-09-03 | 8542323900 | MICROCIRCUITS electronic integrated monolithically (dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT) having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT JOM, civil applications FOR INDUSTRIAL MICRO | *** | KOREA REPUBLIC OF | 10 | 56733,55 | *** | ***** | ***** |
2017-09-11 | 8542339000 | Integrated circuits, monolithic, low-noise signal amplifier in a small ceramic body under the surface PCB mounting. Used to develop CONVERTER UNITS telecommunications equipment, wireless "BASIC | *** | KOREA REPUBLIC OF | 0.12 | 671,41 | *** | ***** | ***** |
2017-09-17 | 8542323900 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) K4B1G1646G-BCH9, 1Gbit, 96 pin, 1.5V SUPPLY VOLTAGE, POWER 0.277VT, SIZE 13.3 * 7.5 * 1.1mm, TV MODELS FOR PROM.SBORKI LE46D550K1WXRU:: SAMSUNG ELECTRONICS CO ., LT | *** | KOREA REPUBLIC OF | 0.9 | 459,51 | *** | ***** | ***** |
2017-09-18 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity of 512 MBIT MORE DYNAMIC MEMORY MODULE - SDRAM of 4 GB MICRON TECHNOLOGY, INC MICRON MICRON MT16HTF51264HZ-800C1 19 | *** | KOREA REPUBLIC OF | 5.33 | 2839,47 | *** | ***** | ***** |
2017-09-21 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC dynamical random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, MIC | *** | KOREA REPUBLIC OF | 47.77 | 151219,12 | *** | ***** | ***** |
2017-09-22 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): IC chip, a semiconductor, DIGITAL, functions DRAM Storages | *** | KOREA REPUBLIC OF | 27.07 | 37023,36 | *** | ***** | ***** |
2017-09-22 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): IC chip, a semiconductor, DIGITAL, functions DRAM Storages | *** | KOREA REPUBLIC OF | 82.88 | 137104,24 | *** | ***** | ***** |
2017-09-24 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): IC chip, a semiconductor, DIGITAL, functions DINAMICHSKOGO RAM USTROYST | *** | KOREA REPUBLIC OF | 69.31 | 160971,84 | *** | ***** | ***** |