| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 30.72 | 56860,8 | *** | ***** | ***** |
| 2017-09-01 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR: UNI | *** | TAIWAN CHINA | 33.28 | 61599,2 | *** | ***** | ***** |
| 2017-09-01 | 8542323900 | Dynamic random access memory (DRAM DDR3) SEMICONDUCTOR SILICON CRYSTALS MEMORY MEMORY 2 GB, 1.5 V, positioned at the adhesive carrier plate diameter of 300 mm uncut crystallized: USED IN THE PRODUCTION OF MICRO | *** | TAIWAN CHINA | 0.75 | 16014,36 | *** | ***** | ***** |
| 2017-09-05 | 8542323900 | Dynamic random access memory (DRAM) BASED MEMORY MODULE FORM FACTOR DDR3 DIMM 1600 MHz (PC3-12800) 240-PIN NON-ECC, reservoirs 8 GB 2 X (512 MB X 8), 1.35 VOLTAGE OR PERMANENT 1.5 CURRENT is used in industry COM | *** | TAIWAN CHINA | 0.05 | 91,01 | *** | ***** | ***** |
| 2017-09-05 | 8542323900 | Electronic integrated circuits, MODEL "EDB8132B4PB-8D-F" - 17 PCS. The product is a synchronous dynamic random access memory of 8 GB and operating frequency to 400MHz. Operating voltage up to 1.8 V.: formed as an integrated MES | *** | TAIWAN CHINA | 0.52 | 198,56 | *** | ***** | ***** |
| 2017-09-07 | 8542323100 | Dynamic random access memory, for use in telecommunications equipment EC for surface mounting on printed circuit boards, unrecorded, does not have the encryption function (CRYPTOGRAPHY) is not CROWBAR ELECT | *** | TAIWAN CHINA | 3.02 | 1576,8 | *** | ***** | ***** |
| 2017-09-08 | 8542323100 | INTEGRATED MONOLITHIC Products: synchronous dynamic random access memory, configuration 4MBITH32 SERIES MT48LC4M32B2. APPLY in computers, laptops, servers, video processing in a device in the security system MT48LC4M | *** | TAIWAN CHINA | 0 | 21,05 | *** | ***** | ***** |
| 2017-09-09 | 8542900000 | Parts of electronic integrated circuits, for navigation equipment that is not for military purposes, NOT SCRAP ELECTRIC BOARD 8116.256-B (KD-GB3484) AS A ceramic-metal enclosure, used in the manufacture CIRCUITS KYOCERA KYOCERA KYOCERA 8116. | *** | TAIWAN CHINA | 2.99 | 52808,97 | *** | ***** | ***** |
| 2017-09-09 | 8542323900 | Electronic integrated circuits, monolithic: dynamic random access memory (DRAM), collected, SINGLE, memory 1Gbit; NOT SCRAP ELECTRIC NOT MILITARY: Designed for surface mounting on printed circuit boards | *** | TAIWAN CHINA | 0.9 | 229,34 | *** | ***** | ***** |
| 2017-09-10 | 8542323100 | MONOLITHIC INTEGRATED ELECTRONIC MICROCIRCUITS, CREATE ELECTROMAGNETIC INTERFERENCE:. Integrated circuits, monolithic, is a dynamic random access memory (SDRAM) with a storage capacity of up to 512 Mbit maximum clock FREQUENTLY | *** | TAIWAN CHINA | 0.05 | 67,5 | *** | ***** | ***** |