DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-04 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): | HYNIX SEMICONDOCTOR | KOREA REPUBLIC OF | 38.35 | 52453,84 | MOSCOW | ***** | ***** |
2017-11-06 | 8542323900 | Integrated circuits, monolithic, digital, dynamic random access memory (DRAM) K4B2G1646F-BCMA, VOLUME 2Gbps, 96 pin input voltage 1.5V, SIZE 13.3 * 7.5 * 1.1mm, for PROM.SBORKI monitor model LH55PMFPBGC / RU, HAS FUNCTIONS | SAMSUNG ELECTRONICS | KOREA REPUBLIC OF | 51.3 | 43029,14 | MOSCOW | ***** | ***** |
2017-11-07 | 8542323900 | CHARTS INTEGRAL.MONOLITTSIFROVYE (MOSFETs) for SPETS.EVM, dynamic random access memory (DRAM) with a storage capacity of 16,384 Mbit memory modules: | "INNODISK", | *** | 0.02 | 19,7 | MOSCOW | ***** | ***** |
2017-11-08 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 Mbit: | LENOVO | *** | 0.45 | 468 | MOSCOW | ***** | ***** |
2017-11-10 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): | MICRON SEMICONDUCTOR ASIA PTE LTD. | KOREA REPUBLIC OF | 49.248 | 178088,16 | MOSCOW | ***** | ***** |
2017-11-11 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY): | SAMT CO., LTD. | KOREA REPUBLIC OF | 44.8 | 78722,56 | MOSCOW | ***** | ***** |
2017-11-14 | 8542323900 | CHARTS INTEGRAL.MONOLITTSIFROVYE (MOSFETs) for SPETS.EVM, dynamic random access memory (DRAM) with a storage capacity of 16,384 Mbit memory modules: | "INNODISK", | *** | 0.03 | 64,16 | MOSCOW | ***** | ***** |
2017-11-14 | 8542323900 | CHARTS INTEGRAL.MONOLITTSIFROVYE (MOSFETs) for SPETS.EVM, dynamic random access memory (DRAM) with a storage capacity of 16,384 Mbit memory modules: | "INNODISK", | *** | 0.36 | 240,24 | MOSCOW | ***** | ***** |
2017-11-14 | 8542323900 | CHARTS INTEGRAL.MONOLITTSIFROVYE (MOSFETs) for SPETS.EVM, dynamic random access memory (DRAM) with a storage capacity of 65536 Mbit memory modules: | "APACER", | *** | 0.18 | 601,44 | MOSCOW | ***** | ***** |
2017-11-14 | 8542323900 | 1-Integrated circuits, monolithic - dynamic random access memory (DRAM) with a storage capacity more than 512 MBIT having no encryption function (CRYPTOGRAPHY) is not contained. Ciphers. (Cryptography.) MEANS NOT SCRAP ELECTRIC, | SK HYNIX INC | SINGAPORE | 12.5 | 25017,28 | MOSCOW | ***** | ***** |