| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-26 | 8542323900 | Electronic integrated circuits, synchronous dynamic random access memory "MT47H64M16NF-25E: M TR" with twice the data rate, memory capacity 1GB (UNITED 8MX16BITH8BLOKOV) Power supply voltage 1.8V USED FOR | MICRON | *** | 88.32 | 163474,8 | ST PETERSBURG | ***** | ***** |
| 2017-11-03 | 8542323100 | Integrated circuits, monolithic, have no function encryption (CRYPTOGRAPHY), dynamic random access memory (DRAM), not radiation. NOT SCRAP ELECTRIC. Memory Size 128 MBIT. APPLICATION: CONSTRUCTION RADIOELECTRONIC | ABSENT | *** | 0.235 | 1134 | ST PETERSBURG | ***** | ***** |
| 2017-11-07 | 8542323100 | MICROCHIP electronic integrated monolithic HAVE encryption function (CRYPTOGRAPHY), dynamic random access memory (DRAM), not radiation. NOT SCRAP ELECTRIC. MEMORY SIZE 512 MBIT. APPLICATION: BUILDING | ABSENT | *** | 0.01 | 57,75 | ST PETERSBURG | ***** | ***** |
| 2017-11-08 | 8542399010 | : Miniature electronic components (radio parts) Integrated Circuits - DYNAMIC PAMYAT.ISPOLZUETSYA in electronic devices civil purposes (TELECOMMUNICATION SYSTEMS INDUSTRIAL handsfree). | ABSENT | CHINA | 0.8 | 369 | ST PETERSBURG | ***** | ***** |
| 2017-11-17 | 8542323900 | MICROCHIP electronic integrated monolithic HAVE encryption function (CRYPTOGRAPHY) - dynamic random access memory (DRAM), with a storage capacity 4GB (not radiation resistant) .PRIMENENIE: BUILDING radio electronic equipment for | ABSENT | *** | 0.2 | 220,5 | ST PETERSBURG | ***** | ***** |
| 2017-11-23 | 8542323900 | MICROCHIP electronic integrated monolithic HAVE encryption function (CRYPTOGRAPHY) - dynamic random access memory (DRAM), with a storage capacity 8GB (not radiation resistant) .PRIMENENIE: BUILDING radio electronic equipment for | WITHOUT A TRADEMARK | *** | 0.02 | 534,87 | ST PETERSBURG | ***** | ***** |
| 2017-11-23 | 8542323900 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - dynamic random access memory (DRAM) SDRAM with a storage capacity of 2 Gbit. (Operating temperature range: -40 ... + 95 ° C) (NOT SCRAP ELECTRIC) | WITHOUT A TRADEMARK | *** | 0.016 | 82,08 | ST PETERSBURG | ***** | ***** |
| 2017-11-26 | 8542323900 | Dynamic random access memory (DRAM) with a storage capacity greater than 512 Mbit encryption (cryptographic) facilities and elements are missing are not intended for secretly obtaining and recording: | XEROX | *** | 0.01 | 2,64 | ST PETERSBURG | ***** | ***** |
| 2017-11-27 | 8542323900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS not integrated with other components of: dynamic random access memory (DRAM), collected, SINGLE, memory 4 HIT; NOT SCRAP | SAMSUNG | *** | 4.7 | 8092,5 | ST PETERSBURG | ***** | ***** |
| 2017-11-27 | 8542323900 | Electronic integrated circuits Monolithic: dynamic random access memory (DRAM), collected, SINGLE, memory 2Gbps; NOT SCRAP ELECTRIC NOT MILITARY | SAMSUNG | *** | 1.25 | 3600 | ST PETERSBURG | ***** | ***** |