DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-03 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | CHINA | 0.97 | 3005,43 | *** | ***** | ***** |
2017-09-03 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | CHINA | 0.94 | 1002,65 | *** | ***** | ***** |
2017-09-03 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | CHINA | 0.56 | 1507,17 | *** | ***** | ***** |
2017-09-03 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT (NOT JOM ELECTRICAL NOT HAVE encryption function (CRYPTOGRAPHY) SM.DOPOLNENIE MONOLITHIC INTEGRATED ELECTRONIC CHART -. FLASH electrically erasable programmable read only memory TSIs | *** | CHINA | 0.12 | 371,78 | *** | ***** | ***** |
2017-09-04 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT monolithic integrated chip. PROGRAMMABLE MEMORY 512 KBIT ATMEL CORPORATION ATMEL ATMEL AT17LV512A-10PU 107 | *** | CHINA | 0.14 | 673,14 | *** | ***** | ***** |
2017-09-04 | 8542326100 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 1MEGABIT for wide application in industrial equipment NOT MILITARY DESTINATION | *** | CHINA | 0.01 | 10,05 | *** | ***** | ***** |
2017-09-04 | 8542326100 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 32MEGABIT for wide application in industrial equipment no military NAZ | *** | CHINA | 0.12 | 136,97 | *** | ***** | ***** |
2017-09-05 | 8542326100 | Electronic integrated circuits, electrically erasable programmable ROM (EEPROM), FOR MICROELECTRONICS APPLICATIONS: MICROCHIP FLASH MEMORY INTERFACE WITH SPI, Volume 128 MBIT, encased UDFN-8. SUPPLY VOLTAGE: 1.7 ... 2. WORKING TEMPERATURE: | *** | CHINA | 0.74 | 583,14 | *** | ***** | ***** |
2017-09-05 | 8542326100 | Electronic integrated circuits, electrically erasable programmable ROM (EEPROM), FOR MICROELECTRONICS APPLICATIONS: FLASH memory chip 512 MBIT HYNIX HYNIX HYNIX H5PS5162FFR-Y5C 350 | *** | CHINA | 0.61 | 345,92 | *** | ***** | ***** |
2017-09-05 | 8542326100 | Electronic integrated circuits, electrically erasable programmable ROM (EEPROM), FOR MICROELECTRONICS APPLICATIONS: MICROCHIP FLASH MEMORY INTERFACE WITH SPI, Volume 128 MBIT, encased UDFN-8. SUPPLY VOLTAGE: 1.7 ... 2. WORKING TEMPERATURE: | *** | CHINA | 3.4 | 2578,56 | *** | ***** | ***** |