| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-02 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | CHINA | 0.68 | 17,94 | *** | ***** | ***** |
| 2017-09-07 | 8541290000 | Transistors, radio-electronic components of a semiconductor material is used for amplifying, oscillating, switching and converting electrical signals. TRANSISTORS APPLY amplifier circuits, signal generators, N- TYPE ASSEMBLY OF TWO | *** | CHINA | 0.02 | 0,83 | *** | ***** | ***** |
| 2017-09-11 | 8541210000 | Bipolar transistor power dissipation of 0.7 W, a phototransistor, NOT SCRAP ELECTRIC, intended to amplify signals to the RADIO ELECTRONIC PRODUCTS bipolar transistor power dissipation 0.7 W "TYT ELECTRONICS CO., LTD" "B | *** | CHINA | 1.35 | 106,5 | *** | ***** | ***** |
| 2017-09-11 | 8541290000 | Transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 80W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 bipolar transistor power dissipation | *** | CHINA | 10 | 2437,89 | *** | ***** | ***** |
| 2017-09-11 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 79VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 FET POWER scattering | *** | CHINA | 7 | 1351,99 | *** | ***** | ***** |
| 2017-09-11 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 42W to enhance signals to the RADIO ELECTRONIC PRODUCTS, DPAK in the housing field-effect transistor with a power dissipating | *** | CHINA | 4 | 504,68 | *** | ***** | ***** |
| 2017-09-11 | 8541290000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 100BT to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 bipolar transistors power | *** | CHINA | 2 | 204,34 | *** | ***** | ***** |
| 2017-09-11 | 8541210000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation 0.25W to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT23 bipolar transistors MOSCHNOS | *** | CHINA | 1 | 127,99 | *** | ***** | ***** |
| 2017-09-11 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 80W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 FET POWER scattering | *** | CHINA | 3 | 369,45 | *** | ***** | ***** |
| 2017-09-11 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 330VT to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased D2PAK FET power dissipation | *** | CHINA | 27 | 4376,09 | *** | ***** | ***** |