DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-07 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 2.85 | 76,34 | *** | ***** | ***** |
2017-09-07 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 2 | 52,59 | *** | ***** | ***** |
2017-09-14 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 0.06 | 3,6 | *** | ***** | ***** |
2017-09-14 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 2.2 | 59,03 | *** | ***** | ***** |
2017-09-14 | 8541409000 | Photosensitive semiconductor element which does not produce electromagnetic interference: The photosensitive semiconductor devices, is a device consisting of a photoreceptor element, amplifying devices and the electromagnetic relay, the principle of Daisy | *** | TAIWAN CHINA | 1 | 25,9 | *** | ***** | ***** |
2017-09-19 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 170W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 FET power dissipation | *** | TAIWAN CHINA | 3 | 458,72 | *** | ***** | ***** |
2017-09-19 | 8541290000 | FET power dissipation of 40W, to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, in the housing TO220, ART. 2SK3568 - 300SHT. : TOSHIBA TOSHIBA 0 | *** | TAIWAN CHINA | 0.5 | 92,63 | *** | ***** | ***** |
2017-09-19 | 8541290000 | BIPOLAR TRANSISTORS FOR AMPLIFICATION signals to the RADIO ELECTRONIC PRODUCTS SM.DOPOLNENIE bipolar transistor power dissipation of 40W, to amplify signals in BLOCKS RADIOELECTRONIC DEVICE, encased SOT32 ST MICROELECTRONICS ST MICROELECT | *** | TAIWAN CHINA | 0.7 | 121,22 | *** | ***** | ***** |
2017-09-19 | 8541290000 | A field effect transistor to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE FET power dissipation 170W to enhance signals to the RADIO ELECTRONIC PRODUCTS, in the housing TO220 FET power dissipation | *** | TAIWAN CHINA | 2.22 | 999,51 | *** | ***** | ***** |
2017-09-19 | 8541290000 | Bipolar transistors to amplify signals IN BLOCKS RADIO ELECTRONIC PRODUCTS, SM.DOPOLNENIE bipolar transistor power dissipation of 1W to enhance signals to the RADIO ELECTRONIC PRODUCTS, encased SOT89 bipolar transistor with a power | *** | TAIWAN CHINA | 0.5 | 103,23 | *** | ***** | ***** |