DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-08 | 8542326100 | Electronic integrated circuits -ZAPOMINAYUSCHIE UNITS FULLY programmable electrically erasable read only memory FLASH EPROM ES BASED matrix structure, with a storage capacity 8Mbit for use in domestic and industrial: NO | *** | CHINA | 0.28 | 1422,82 | *** | ***** | ***** |
2017-09-08 | 8542327500 | Electronic integrated circuits -ZAPOMINAYUSCHIE UNITS FULLY programmable electrically erasable read only memory EEPROM EEPROM ES for use in consumer and industrial electronics: Memory chips ART.24LC65-I / SM-9: 00 | *** | CHINA | 0.48 | 547,75 | *** | ***** | ***** |
2017-09-15 | 8542327500 | Electronic integrated circuits -ZAPOMINAYUSCHIE UNITS FULLY programmable electrically erasable read only memory EEPROM EEPROM ES for use in consumer and industrial electronics: Memory chips ART.AT24C04BN-SH-: T- | *** | CHINA | 0.24 | 178,88 | *** | ***** | ***** |
2017-09-15 | 8542327500 | Electronic integrated circuits -ZAPOMINAYUSCHIE UNITS FULLY programmable electrically erasable read only memory EEPROM EEPROM ES for use in consumer and industrial electronics: Memory chips ART.24LC512T-I / SM: -2 | *** | CHINA | 0.25 | 768,47 | *** | ***** | ***** |
2017-09-15 | 8542327500 | Electronic integrated circuits -ZAPOMINAYUSCHIE UNITS FULLY programmable electrically erasable read only memory EEPROM EEPROM ES for use in consumer and industrial electronics: Memory chips ART.AT25320B-SSHL: -B | *** | CHINA | 0.02 | 26,45 | *** | ***** | ***** |
2017-09-15 | 8542329000 | Electronic integrated circuits -ZAPOMINAYUSCHIE other equipment, a ferroelectric random access memory FRAM sampling, non-volatile for use in consumer and industrial electronics: Memory chips ART.FM25CL64B-GTR-50: PCS | *** | CHINA | 0 | 28,6 | *** | ***** | ***** |
2017-09-20 | 8542326100 | FLASH EPROM ES with a storage capacity to 512 Mbit FOR LED screens / NOT SCRAP EL.OBORUD. DO NOT WASTE / NOT FOR EQUIPMENT. Exercising. IN explosive. MEDIA / no military., Not a double. DESTINATION. / Electrically erasable erasable ZAPOM | *** | CHINA | 9.6 | 11760 | *** | ***** | ***** |
2017-09-20 | 8542326100 | ES FLASH EPROM MEMORY WITH VOLUME LESS THAN 512 MBIT, FOR DIGITAL TELEVISION CONSOLE / NOT JOM EL.OBORUD. Without departing / NOT TO EQUIPMENT. Exercising. IN explosive. MEDIA / no military., Not a double. DESTINATION. / EEPROM rewritable PERMANENT ZAPOM | *** | CHINA | 12 | 11280 | *** | ***** | ***** |
2017-09-28 | 8542326100 | Electronic integrated circuits -ZAPOMINAYUSCHIE UNITS FULLY programmable electrically erasable read only memory FLASH EPROM ES BASED matrix structure, with a storage capacity 256MBIT for use in domestic and industrial: EN | *** | CHINA | 0.01 | 79,79 | *** | ***** | ***** |
2017-09-28 | 8542327500 | Electronic integrated circuits -ZAPOMINAYUSCHIE UNITS FULLY programmable electrically erasable read only memory EEPROM EEPROM ES for use in consumer and industrial electronics: Memory chips ART.24LC256T-I / SM: -1 | *** | CHINA | 0.13 | 188,56 | *** | ***** | ***** |