DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-07 | 8541290000 | TRANSISTORS WITH POWER OVER dissipation 1W AND NOT NOT photo- and light emitting, INDUSTRIAL APPLICATIONS INCLUDING: P-channel field effect transistor with insulated gate HOUSING (TO-263), MAKS.NAPRYAZH. Drain-Source -60VDC, RAB.TOK Photo - 110A, Rab | *** | CHINA | 0.56 | 2848,79 | *** | ***** | ***** |
2017-09-12 | 8541290000 | Semiconductor devices - Module IGBT. IS A HIGH-SPEED DUAL POWER module based on insulated-gate bipolar transistor MANAGEMENT UV lamp FLEKSOPRINTERA. MAX. Switched current - 150 A MAKS.NAPRYAZHENIE 1: 20 | *** | ITALY | 0.62 | 141,52 | *** | ***** | ***** |
2017-09-18 | 8541290000 | PARTS PREDNAZN.DLYA REPAIR AND APPARATUS TECHNICAL OBSLUZH.SVAROCHNOGO Inverters MOD.MICRO SVR-205, HIGH TRANSISTOR (semiconductor element) MOSCHN.RASSEIVANIYA 205VT, NAPRYAZH.60V, CURRENT 96A, USILIV.I GENERIR.ELEKTROKOLEBANIYA TOTAL 150 pieces. : ZHEN | *** | CHINA | 1.2 | 133,72 | *** | ***** | ***** |
2017-09-18 | 8541290000 | PARTS PREDNAZNACHENNNYE REPAIRING AND APPARATUS TECHNICAL OBSLUZH.SVAROCHNOGO MOD.SVI Inverters 200, HIGH TRANSISTOR (semiconductor element) MOSCHN.RASSEIVANIYA 200W, NAPR.55V, CURRENT 94A, USILIV.I GENERIR.ELEKTROKOLEBANIYA TOTAL 150 pieces. : ZHEN | *** | CHINA | 1.2 | 75,22 | *** | ***** | ***** |
2017-09-21 | 8541290000 | TRANSISTORS WITH POWER OVER dissipation 1W AND NOT NOT photo- and light emitting, INDUSTRIAL APPLICATIONS INCLUDING: P-channel field effect transistor with insulated gate HOUSING (TO-263), MAKS.NAPRYAZH. Drain-Source -60VDC, RAB.TOK Photo - 110A, Rab | *** | MEXICO | 1.72 | 957,66 | *** | ***** | ***** |
2017-09-25 | 8541290000 | Bipolar transistors SILICON TOUCH: power dissipation and NOMIN.NAPRYAZHENIE DC: MODEL IB1191 - 7 watts and 50 V intended for use in the equipment GRAZHD.PRIMENENIYA, Switching Power Amplifiers AIR CONTROL SYSTEM | *** | UNITED STATES | 5.3 | 178500 | *** | ***** | ***** |
2017-09-27 | 8541290000 | Transistors, EXCEPT phototransistor, spare parts for repair and maintenance of road building technics "KOMATSU": TRANSISTOR NAPR.24V KOMATSU LTD KOMATSU ND077800-1120 NO NO 4 | *** | JAPAN | 0.51 | 160,15 | *** | ***** | ***** |
2017-11-20 | 8541290000 | MODULE BLOCK TRANZISTORNYY- transistor for controlling the input signal In EL.TSEPI HYDRAULIC forklift NAPR.600V TO ART. 35030-00790-3SHT | NICHIYU | JAPAN | 7.78 | 3044,49 | KOBE | ***** | ***** |
2017-11-22 | 8541290000 | MODULE transistors IS IGBT-transistor assembly with an insulated gate for controlling nutrition in telecommunications equipment. INPUT VOLTAGE 15.5, NAPRYAZHENIE collector-emitter 1700, OUTPUT | MITSUBISHI | *** | 273 | 138127,64 | BERLIN | ***** | ***** |