Aram Import Data of Russia

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Find trade data and market research report on aram imports under HS Code 8541290000 and follow up market price of arams. Know market share of companies importing aram under HS Code 8541290000

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-05	8541290000	Field-effect transistors, power dissipation 104 W, 20 V, semiconductor - silicon are designed for logic circuits to control the parameters of their ENERGY,: VISHAY INTERTECHNOLOGY VISHAY INTERTECHNOLOGY, CHINA SIR440DP-T1-GE3 300	***	UNITED STATES	0.05	650,64	***	*****	*****
2017-09-19	8541290000	FET power dissipation BT 375, the source-drain VOLTAGE 150V, SEMICONDUCTOR - SILICON FOR LOGIC CIRCUITS ARE TO CONTROL PARAMETERS OF ENERGY,: INFINEON TECHNOLOGIES INFINEON TECHNOLOGIES, CHINA IPT059N15N	***	THAILAND	0.01	117,52	***	*****	*****
2017-09-28	8541290000	FET power dissipation BT 125, the source-drain VOLTAGE 50V, SEMICONDUCTOR - SILICON FOR LOGIC CIRCUITS ARE TO CONTROL PARAMETERS OF ENERGY,: NXP NXP, TAIWAN (CHINA) MMRF5014HR5 2	***	GERMANY	0.01	1146,4	***	*****	*****
2017-09-29	8541290000	Field-effect transistors, power dissipation of 2.5 W, a voltage source-drain -30 V, semiconductor - silicon are designed for logic circuits to control the parameters of their power, field effect transistors, power dissipation of 2.5 W, voltage and	***	UNITED STATES	0.05	48,15	***	*****	*****
2017-11-01	8541290000	Field-effect transistors, power dissipation 32 W, a voltage source-drain 600, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption,	INFINEON TECHNOLOGIES, CHINA	***	0.004	4,32	MOSCOW	*****	*****
2017-11-01	8541290000	Field-effect transistors, power dissipation of 100 W, a voltage source-drain 100 V, semiconductor - silicon is designed for logic circuits to control the parameters of their energy consumption,	INFINEON TECHNOLOGIES, GERMANY	***	0.4	1085,5	MOSCOW	*****	*****
2017-11-01	8541290000	Field-effect transistors, power dissipation of 235 watts, the voltage source-drain 400, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption,	ON SEMICONDUCTOR, CHINA	***	0.225	103,55	MOSCOW	*****	*****
2017-11-08	8541290000	Field-effect transistors, power dissipation 158 VT, the voltage source-drain 75, semiconductor - silicon are designed for logic circuits to control the parameters of their energy consumption, 118	NEXPERIA, PHILIPPINES	***	0.011	29,62	MOSCOW	*****	*****
2017-11-08	8541290000	FET, voltage 60 V, Resistance of the IOM 23, dissipation of 110 W, current 48 A SEMICONDUCTOR - SILICON FOR LOGIC CIRCUITS ARE TO CONTROL PARAMETERS OF ENERGY,	INFINEON TECHNOLOGIES, CHINA	***	0.05	63,39	MOSCOW	*****	*****
2017-11-08	8541290000	Field-effect transistors, power dissipation of 150 W, a voltage source-drain 1.2 KV, semiconductors - silicon are designed for logic circuits to control the parameters of their energy consumption,	STMICROELECTRONICS, MALAYSIA	***	0.009	15,5	MOSCOW	*****	*****

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Our aram import data of Russia and market research report covers market priceof aram and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of aram in Russia. Few shipment records with a small number of important columns from Russia import data of aram are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of aram. To view more shipment records of aram import data of Russia, you can set a filter by Country Name, HS Code and Place.

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