DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541401000 | Phototransistor TEMT1000. IS optoelectronic semiconductor devices, OPTION bipolar transistor NPN STRUCTURE. It consists of three main areas: the emitter, base and collector mounted on board COUNTER phototransistor EL. ENERGY | *** | TAIWAN CHINA | 1.82 | 1287 | *** | ***** | ***** |
2017-09-12 | 8541401000 | LASER DIODE (MODULE) with the fiber output ART: NL-P4-110-0808-3-B-R01-DATA laser diodes with 808 nm, VOLTAGE 27.4 volts, 110 watts. Material: Copper, semiconductors, steel, glass, CRYSTAL, plastic. APPLICATION AREA | *** | CHINA | 0.8 | 5038,66 | *** | ***** | ***** |
2017-09-13 | 8541401000 | LED lamps LED WARNING LIGHT is designed for installation on a lathe MODEL GENOS L300-M, 24V LED LAMP in a steel cabinet are provided for illuminating the work area of ​​a lathe MODEL GENOS L300-M, 24V SHAN HO ELECT | *** | TAIWAN CHINA | 10.6 | 837,9 | *** | ***** | ***** |
2017-09-25 | 8541401000 | Light emitting diodes (LED), a laser sensor DIFFUSE LASER PLASTIC. 12H33,7H10,4MM, AREA 22-130MM, 10-30VDC POWER, JACK BAUMER ELECTRIC AG MISSING OHDK 10P5101 / S35A 1 | *** | SWITZERLAND | 0.19 | 227,36 | *** | ***** | ***** |
2017-11-02 | 8541401000 | HOLDERS OF SIGNAL LED lamps are LED is permanently and flashes glow, as a light element is mounted LED operating voltage of 265 V, the control circuit PRIMENENIYA- AREA INDUSTRIAL EQUIPMENT | LOVATO | ITALY | 3.1 | 1365,27 | WARSAW | ***** | ***** |
2017-11-21 | 8541401000 | Infrared LED, semiconductor material - gallium aluminum arsenide, designed for distribution of the IR signal via fiber, typical 830 nm, a maximum voltage of 5 V, the current of 100 mA, for use in areas | VISHAY SEMICONDUCTOR, CHINA | *** | 0.008 | 60,2 | MOSCOW | ***** | ***** |