| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-05 | 8541210000 | TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE: transistors, bipolar, POLARITY PNP, MAXIMUM collector-emitter voltage of 100 volts, silicon, Maximum DC collector current of 6A, BASE T | *** | CHINA | 0.7 | 40,58 | *** | ***** | ***** |
| 2017-09-06 | 8541210000 | TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE-TYPE SEMICONDUCTOR SILICON: Transistor ASSEMBLY, products consisting of two bipolar transistors POLARITY NPN, Maximum Collector Current 0.2 A, MAK | *** | MALAYSIA | 0.01 | 2,22 | *** | ***** | ***** |
| 2017-09-06 | 8541210000 | TRANSISTORS, SUITABLE FOR USE IN ELECTRICAL ASSEMBLY FOR GENERAL PURPOSE-TYPE SEMICONDUCTOR SILICON transistor ASSEMBLY, products consisting of two bipolar transistors POLARITY NPN, MAXIMUM collector current 0.05 A, MAK | *** | MALAYSIA | 0 | 6,36 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | Other transistors, phototransistors EXCEPT: MOS TRANSISTOR ROHS: respective housing: SMD PACKAGING / UNIT: SOT-23-3 Number of channels: 1 Transistor Polarity: N VDS - breakdown voltage of the drain-source 30 V ID - CONSTANT CURRENT LEAKS: A 5 RDS ON - SOPROT | *** | SLOVAKIA | 0.97 | 559,09 | *** | ***** | ***** |
| 2017-09-08 | 8541210000 | TRANSISTORS EXCEPT phototransistor dissipation of less than 1 W: MOS TRANSISTOR NUMBER CHANNEL 1 CHANNEL TRANSISTOR POLARITY: N-CHANNEL VDS - breakdown voltage of the drain-source: MOS TRANSISTOR NUMBER OF CHANNELS: 1 Transistor Polarity: N VDS - H | *** | SLOVAKIA | 18 | 5269,72 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | Other transistors EXCEPT phototransistor: MOSFET VDS - drain-source voltage: 75 V PD - Power Dissipation: 330 W Number of channels: 1 Transistor Polarity: N ID - CONSTANT CURRENT LEAKS: 140 A RDS ON - Resistance Drain-7 mOHMS VG | *** | SLOVAKIA | 13.4 | 4846,21 | *** | ***** | ***** |
| 2017-09-08 | 8541290000 | Other transistors, phototransistors EXCEPT: TRANSISTOR MOS TRANSISTOR POLARITY: N VDS - breakdown voltage of the drain-source 30 V ID - CONSTANT CURRENT LEAKS: MOS TRANSISTOR NUMBER OF CHANNELS: 1 Transistor Polarity: N VDS - breakdown voltage of the drain-source 4 | *** | SLOVAKIA | 21.68 | 8757,64 | *** | ***** | ***** |
| 2017-09-08 | 8541100009 | DIODES OTHER THAN OR photodiode light emitting diode (LED): DIODES FOR Transient Voltage Suppressors ROHS: appropriate polarity: UNIDIRECTIONAL breakdown voltage: 7.2 V VOLTAGE CLAMP: 14.5 V PD - power dissipation of 400 W STMI | *** | SLOVAKIA | 4 | 793,65 | *** | ***** | ***** |
| 2017-09-13 | 8541290000 | FET TRANSISTOR PD55003-E STMICROELECTRONICS PRODUCTION COMPANY IS RF MOSFETs. ADVANTAGES: LOW OPERATING CURRENT AND LOW VOLTAGE. Used in network switches, valves. Transistor Polarity: N-CHANNEL. ID | *** | UNITED STATES | 1.94 | 13068 | *** | ***** | ***** |
| 2017-09-14 | 8541210000 | TRANSISTORS low-power, FOR RADIO EQUIPMENT TRANSISTORS low-power 0.25 Tues GAIN: 80 ... 250 Polarity: NPN HULL TYPE: SOT-23 collector current: 600mA transmission frequency: 100 MHz emitter-collector voltage of 160 V MO SCATTERING | *** | UNITED KINGDOM | 0.01 | 0,36 | *** | ***** | ***** |