DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-02 | 8541409000 | Optocouplers, SEMICONDUCTOR MATERIAL - gallium arsenide, the isolation voltage 3.75 kV DC, voltage of 5 V DC, current 10 mA, the dissipated power of 60 MW, is designed to convert an electric signal into light, its | BROADCOM, CHINA | *** | 0.002 | 11,18 | MOSCOW | ***** | ***** |
2017-11-14 | 8541401000 | LED, semiconductor material - gallium arsenide, indium phosphide, LED COLOR - green / red, typical wavelengths 570/630 HM, INTENSITY 50/230 MCD, a maximum voltage of 2.1 / 1.95, CURRENT 20 MA is intended for illumination and | KINGBRIGHT, CHINA | *** | 0.125 | 70,65 | MOSCOW | ***** | ***** |
2017-11-20 | 3818009000 | Substrate monocrystalline gallium arsenide GAAS (III / V) with successive grown heteroepitaxial layers based on gallium arsenide COMPOUNDS GAAS (III / V), used in production of the laser device. | ABSENT | TAIWAN CHINA | 0.9 | 39600 | MOSCOW | ***** | ***** |
2017-11-21 | 8541409000 | Optocouplers, SEMICONDUCTOR MATERIAL - gallium arsenide, isolation voltage 5.3 KV DC, voltage 70 V DC, current 60 mA, the dissipated power of 150 MW, for electric signal into light, its | VISHAY SEMICONDUCTOR, PHILIPPINES | *** | 0.456 | 490,94 | MOSCOW | ***** | ***** |
2017-11-21 | 8541401000 | Infrared LED, semiconductor material - gallium aluminum arsenide, designed for distribution of the IR signal via fiber, typical 830 nm, a maximum voltage of 5 V, the current of 100 mA, for use in areas | VISHAY SEMICONDUCTOR, CHINA | *** | 0.008 | 60,2 | MOSCOW | ***** | ***** |
2017-11-22 | 3818009000 | Chemical elements doped - indium arsenide for use in electronics, in the form of discs DIAMETER 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box, THEN | ABSENT | CHINA | 0.12 | 4500 | MOSCOW | ***** | ***** |
2017-11-23 | 8541409000 | Optocouplers, SEMICONDUCTOR MATERIAL - gallium arsenide, insulation voltage of 2.5 kV DC, 3 V DC, current 40 mA, power dissipation of 175 MW, is designed to convert an electrical signal into light, its | EXCELITAS TECHNOLOGIES, CHINA | *** | 0.007 | 38,4 | MOSCOW | ***** | ***** |
2017-11-27 | 8541409000 | Optocouplers, SEMICONDUCTOR MATERIAL - gallium arsenide, isolation voltage 5.3 KV DC, voltage 70 V DC, current 60 mA, the dissipated power of 150 MW, for electric signal into light, its | VISHAY SEMICONDUCTOR, PHILIPPINES | *** | 0.285 | 306,84 | MOSCOW | ***** | ***** |
2017-11-28 | 8541401000 | LED, semiconductor material - gallium arsenide, indium phosphide, LED COLOR - green / red, typical wavelengths 570/630 HM, INTENSITY 50/230 MCD, a maximum voltage of 2.1 / 1.95, CURRENT 20 MA is intended for illumination and | KINGBRIGHT, CHINA | *** | 0.113 | 71,2 | MOSCOW | ***** | ***** |