DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-01 | 8542326100 | MONOLITHIC INTEGRATED MICROCHIP / FLASH electrically erasable programmable read only memory (FLASH-EPROM ES) VOLUME 16MBIT, SERIES SST39VF1602C; Used in the device of automotive electronics, medical equipment, SST39V | *** | TAIWAN CHINA | 0.02 | 789,29 | *** | ***** | ***** |
2017-09-06 | 8542326900 | Integrated circuits - electrically erasable rewritable read-only memory VOLTAGE 2 Operating temperature from - 40 to + 85 MB MEMORY 32: XILINX WITHOUT TK B / M XCF32PVOG48C B / M 120 | *** | TAIWAN CHINA | 0.26 | 1991,39 | *** | ***** | ***** |
2017-09-08 | 8542326100 | MONOLITHIC INTEGRATED MICROCHIP / FLASH electrically erasable programmable read only memory (FLASH-EPROM ES) C SPI INTERFACE, VOLUME 16MBIT, SERIES AT45DB161E; Used in the device voice recognition and AT45DB161E-SHD-T; | *** | TAIWAN CHINA | 0.75 | 3555,3 | *** | ***** | ***** |
2017-09-08 | 8542339000 | Integrated circuits, monolithic: SVERHCHASTOTNYE KASAKADIROVANNYE Series amplifiers NBB-300. Used in wireless Data Communications Systems; The amplifier, in a wireless communication system, ETC. (NOT SCRAP ELECTRIC) NBB-300-T1; MICROCIRCUITS cascading | *** | TAIWAN CHINA | 0 | 19,63 | *** | ***** | ***** |
2017-09-08 | 8542327500 | Integrated circuits: Electronic integrated circuits solid - electrically erasable programmable read-only memory for widespread use in industrial equipment NOT MILITARY and consumer electronics (H | *** | TAIWAN CHINA | 4.2 | 2178,4 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 64 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 10.3 | 4600 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 4 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special TE | *** | TAIWAN CHINA | 0.9 | 400 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 32 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 28.5 | 12880 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Memory chip monolithic integrated electrically erasable programmable TYPE MEMORY NOR FLASH, VOLUME 32 MB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 2.8 | 1440 | *** | ***** | ***** |
2017-09-13 | 8542326900 | Memory chip monolithic integrated electrically erasable programmable, memory type NAND FLASH, VOLUME 1 GB, 2.7-3.6 SUPPLY VOLTAGE B QTY CYCLES OVERWRITE 100 K HAS encryption (cryptographic) means, no special T | *** | TAIWAN CHINA | 3.2 | 7360 | *** | ***** | ***** |