DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8513100000 | Head lamp LIGHTS FATMAX, LED, BATTERY TYPE 3 X AA, HOURS 8 HOURS TO BLACK & DECKER HOLDINGS GMBH STANLEY STANLEY FMHT0-70767 FMHT0-70767 6 | *** | UNITED STATES | 1.08 | 44,3 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOS transistors, dissipation of 27 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK INFINEON BSZ0506NSATMA1 B / 19 H | *** | CHINA | 0.02 | 9,98 | *** | ***** | ***** |
2017-09-08 | 8533100000 | Fixed resistors: Resistors STANDING film for consumer electronics (NOT SCRAP ELECTRIC). Packed in blisters tape on the reel INFINEON TECHNOLOGIES AG INFINEON IGD06N60TATMA1 IGD06N60TATMA1 IGD06N60TATMA1 300 | *** | UNITED STATES | 0.1 | 144,74 | *** | ***** | ***** |
2017-09-22 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation BT 83 INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / B IPD60R385CPATMA1 H / H 5 | *** | CHINA | 0.02 | 7,58 | *** | ***** | ***** |
2017-09-28 | 8513100000 | Head lamp LIGHTS FATMAX, LED, BATTERY TYPE 3 X AA, HOURS 8 HOURS TO BLACK & DECKER HOLDINGS GMBH STANLEY STANLEY FMHT0-70767 FMHT0-70767 12 | *** | CHINA | 2.16 | 87,44 | *** | ***** | ***** |
2017-09-28 | 8541290000 | Transistor with a power dissipation of at least 1 Tues. (NO ELECTRICAL SCRAP) MOSFET power dissipation 81.1 BT INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N SPB18P06PGATMA1 B / 25 H | *** | CHINA | 0.03 | 17,27 | *** | ***** | ***** |
2017-09-29 | 8541290000 | Transistors with power dissipation MORE 1W. (NO ELECTRICAL SCRAP) MOS TRANSISTOR PD - power dissipation of 33 W INFINEON TECHNOLOGIES WITHOUT TRADEMARK B / N IPG20N06S4L26AATMA1 B / H 135 | *** | CHINA | 0.16 | 57,09 | *** | ***** | ***** |
2017-11-07 | 8541290000 | TRANSISTOR IPB009N03LGATMA1 - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM power dissipation - 250 W; The breakdown voltage of the drain-source - 30 V; Drain current | ABSENT | *** | 2.745 | 1037,03 | KAZAN | ***** | ***** |
2017-11-24 | 8536700001 | Connecting elements for wire and cables PLATMASSY | ALCO | *** | 0.23 | 64,06 | RICK BERLINS | ***** | ***** |
2017-11-24 | 8536700001 | Connecting elements for wire and cables PLATMASSY | ALCO | *** | 25.6 | 575,24 | RICK BERLINS | ***** | ***** |