DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers TELECOMMUNICATIONS SECTORS / NOT SCRAP, WASTE NOT / NOT WAR, NOT DUAL-USE / NO for equipment operating in explosive atmospheres / SEMICONDUCTOR | *** | JAPAN | 4.84 | 74625,41 | *** | ***** | ***** |
2017-09-06 | 8541290000 | Spare parts for REMONTA- semiconductor transistor: / NOT SCRAP / / NOT WASTE / NOT FOR EQUIPMENT. WORKS. In potentially explosive atmospheres / / NOT FOR VEHICLES / NOT MILITARY / / NOT DUAL-USE / semiconductor transistor power dissipation of 10 W, | *** | MALAYSIA | 0.05 | 45,73 | *** | ***** | ***** |
2017-09-09 | 8541290000 | Transistors, power dissipation 2.5W, LED screen, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NO MILITARY OR DUAL-USE / / Not for equipment operating in explosive atmospheres / FAIRCHILD SEMICONDUCTOR FAIRCHILD SEMICONDUCTOR FD | *** | MALAYSIA | 0.6 | 3078 | *** | ***** | ***** |
2017-09-09 | 8541290000 | Transistors, power dissipation 79 W for the production of cash-handling equipment, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NO MILITARY OR DUAL-USE / / Not for equipment operating in explosive atmospheres / INFINEON TECHNOLOGIES INFINEON TECHN | *** | MALAYSIA | 2.8 | 1271,5 | *** | ***** | ***** |
2017-09-10 | 8541290000 | Semiconductor field-effect transistors are designed for use in power amplifiers telecommunications industry / NOT SCRAP, WASTE NOT, NOT MILITARY OR DUAL-USE NOT for equipment operating in explosive atmospheres / semiconductor | *** | JAPAN | 11.86 | 222812,68 | *** | ***** | ***** |
2017-09-14 | 8541290000 | Transistors, power dissipation 1.3 W FOR ELECTRICITY METERS, DO NOT SCRAP ELECTRIC, DO NOT WASTE; NO MILITARY OR DUAL-USE / / Not for equipment operating in explosive atmospheres / INTERNATIONAL RECTIFIER INTERNATIO | *** | MEXICO | 1.05 | 840 | *** | ***** | ***** |
2017-09-19 | 8541290000 | SEMICONDUCTOR TRANSISTORS NOT FOR MED. MINING, nuclear and F / A equipment that is not for use in explosive atmospheres of FETs INFINEON TECHNOLOGIES INFINEON MOSFET N-CH IPP030N10N3G IPP030N10N3 EG. 20V POWER. 300W 2 | *** | CHINA | 0.01 | 8,51 | *** | ***** | ***** |
2017-09-23 | 8541290000 | Other transistors, phototransistor EXCEPT FOR THE PRODUCTION OF ELECTRICITY METERS / NOT SCRAP, NOT WASTE / not double, not a military one. PURPOSE / NOT for equipment operating in explosive atmospheres / transistor power dissipation 1.3 W INTERNATIONAL REC | *** | CHINA | 1.68 | 1200 | *** | ***** | ***** |
2017-09-27 | 8541290000 | Semiconductor transistor, the power dissipation of 2 W to produce a controller equipment of common purpose / NOT SCRAP, NOT WASTE / not double, not a military one. PURPOSE / NOT for equipment operating in explosive atmospheres / semiconductors | *** | MEXICO | 0.72 | 680 | *** | ***** | ***** |
2017-09-29 | 8541290000 | TRANSISTORS Power Dissipation 31.7 BT ARTICLE PD55003TR-E - 600SHT for use in the telecommunications industry. / NOT SCRAP ELECTRIC, DO NOT WASTE, NOT MILITARY OR DUAL-USE NOT for equipment in potentially explosive atmospheres: CPE | *** | THAILAND | 1.43 | 1677,6 | *** | ***** | ***** |