| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-01 | 8541100009 | DIODES MODULE FOR SEMICONDUCTOR DIODES consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (placers AVERAGE) VISHAY INTERTECHNOLOGY INC. VISHAY VS-GBPC3510W VS-GBPC3510 | *** | CHINA | 0.06 | 16,97 | *** | ***** | ***** |
| 2017-09-05 | 8541100009 | DIODES, designed for use in electrotechnical assemblies GENERAL PURPOSE: Schottky diodes, silicon, forward voltage of 0.64 V at a current 1A, repetitive reverse voltage is 40 V, the average value is rectified current of 1 A,. INTENDED FOR | *** | CHINA | 0.1 | 53,43 | *** | ***** | ***** |
| 2017-09-07 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 940VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (placers AVERAGE) IXYS CORPORATION IXYS CORPORA | *** | CHINA | 0.7 | 278,54 | *** | ***** | ***** |
| 2017-09-08 | 8541100009 | DIODES: RECTIFIER BRIDGE. The maximum peak reverse voltage 1600V. PEAK AVERAGE DIRECT CURRENT 208A. DIMENSIONS 94 X 42 X 30MM. Used for electrical purposes: INFINEON TECHNOLOGIES CEGLED KFT. INFINEON INFINEON 752-8293 DDB6U205N16L 1 | *** | CHINA | 0.18 | 107,64 | *** | ***** | ***** |
| 2017-09-08 | 8541100009 | DIODES: Bridge rectifier modules. The maximum peak reverse voltage 1600V. PEAK AVERAGE DIRECT CURRENT 107A. DIMENSIONS 67 X 50 X 31MM. Used for electrical purposes: IXYS SEMICONDUCTOR GMBH IXYS IXYS 920-0811 VBO105-16NO7 10 | *** | CHINA | 2.71 | 378,2 | *** | ***** | ***** |
| 2017-09-08 | 8541300009 | TRIAC (triac). Repetitive peak inverse voltage 600V. NOMINAL AVERAGE CURRENT 8A. DIMENSIONS 10.3 X 4.6 X 9.3MM. NOT AN ELECTRICAL CROWBAR. Used for electrical repetitive peak reverse voltage of 8 | *** | CHINA | 0.1 | 29,85 | *** | ***** | ***** |
| 2017-09-17 | 8541290000 | AVERAGE POWER TRANSISTORS: N-CHANNEL "TK10A80W, S4X (S" COMMON dissipation 40W, collector-emitter voltage 80V and the breakdown voltage of the drain-source 800V TYPE SEMICONDUCTOR - SILICON:.. N-channel MOS transistor SERIES TK10A80W INTENDED | *** | CHINA | 107.65 | 23370 | *** | ***** | ***** |
| 2017-09-17 | 8541290000 | TRANSISTORS Power Dissipation 1.65 BT: TYPE SEMICONDUCTOR - silicon, transition type - NPN.OPISANIE: bipolar NPN transistors average power plastic case for surface mounting. APPLICATION - CONTROL UNIT LED indicator | *** | CHINA | 0.21 | 84,88 | *** | ***** | ***** |
| 2017-09-20 | 8541100009 | Schottky diodes B0540W-7-F.PREDSTAVLYAET are semiconductor devices based on PN junction, enclosed in a rectangular plastic case. Designed to protect IF THERE reverse voltage. Average Rectified Current 0.5A Schottky diodes FOTOCHUVS | *** | CHINA | 1.81 | 1007,41 | *** | ***** | ***** |
| 2017-09-22 | 8541100009 | DIODES THAN OR photodiode light-emitting diodes: rectifier diodes ASSEMBLY power supply. Maximum reverse voltage DIODE - 180B DIRECT CURRENT DIODE (average) power dissipation 5A - 3 BAT Operating temperature 0 - 170 ° C INSTALLATION SMT Nakle | *** | CHINA | 0.5 | 2401 | *** | ***** | ***** |