DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-07 | 8542399090 | MICROCHIP IR2128SPBF - ANALOG integrated circuit power supplies. IS drivers for TIR and IGBT transistors. MAXIMUM offset voltage - 600 V; Maximum output current 250 NARASTANIYA- MA; Maximum output current 500 SPADA- MA; | ABSENT | *** | 2.52 | 4137,86 | KAZAN | ***** | ***** |
2017-11-07 | 8504509500 | THROTTLE SDR0604-100ML. TYPE OF INSTALLATION - SMD. In the electrical scheme - "DELAY" (reduced by a period of time) EFFECT OF CURRENT some frequencies. INDUCTANCE - 10 uH; Maximum DC Current - 1,45A. | ABSENT | *** | 4.536 | 899,77 | KAZAN | ***** | ***** |
2017-11-07 | 8541100009 | DIOD MURS160T3G - FAST rectifier diodes. Type of installation - SMD. Reverse voltage - 600V; Forward Voltage: 1,25V; MAXIMUM CONTINUOUS DIRECT CURRENT - 2 A; Operating temperature range: - 65 C + 175 C. INTENDED FOR USE BY | ABSENT | *** | 7.218 | 1607,98 | KAZAN | ***** | ***** |
2017-11-07 | 8541290000 | TRANSISTOR SPW17N80C3FKSA1 - TRANSISTOR N-channel powerful FIELD. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". MAXIMUM power dissipation - 227 Tues The breakdown voltage of the drain-source 800 W. Drain Current 17 A MAXIMUM | ABSENT | *** | 40.158 | 10335,79 | KAZAN | ***** | ***** |
2017-11-07 | 8541290000 | TRANSISTOR SPP20N65C3XKSA1 - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM power dissipation - 208 W; The breakdown voltage of the drain-source - 650; Drain current | ABSENT | *** | 4.122 | 2936,31 | KAZAN | ***** | ***** |
2017-11-07 | 8541290000 | TRANSISTOR IRF7842PBF - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM POWER OF DISPERSION - 2.5 W; The breakdown voltage of the drain-source - 40 V; The drain current of 18 A. | ABSENT | *** | 0.504 | 338,7 | KAZAN | ***** | ***** |
2017-11-07 | 8541290000 | TRANSISTOR IPB009N03LGATMA1 - TRANSISTOR N-channel, powerful, field. MADE IN TECHNOLOGY "METAL - OXIDE - SEMICONDUCTOR". TYPE OF MOUNTING - SURFACE. MAXIMUM power dissipation - 250 W; The breakdown voltage of the drain-source - 30 V; Drain current | ABSENT | *** | 2.745 | 1037,03 | KAZAN | ***** | ***** |