DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-09-01 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 1,7VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) VISHAY INTERTECHNOLOGY INC. VI | *** | CHINA | 0 | 13 | *** | ***** | ***** |
2017-09-03 | 8541290000 | Semiconductor devices: transistors, for PCB mounting | VISHAY | *** | 58.57 | 22607,21 | ST PETERSBURG | ***** | ***** |
2017-09-03 | 8541290000 | Semiconductor devices: transistors, for PCB mounting: VISHAY INTERTECHNOLOGY INCORP VISHAY VISHAY IRFL9014TRPBF 15000 INFINEON TECHNOLOGIES AG INFINEON INFINEON BCR573E6327HTSA1 102000 INFINEON TECHNOLOGIES AG INFINEON INFINEON BCX42E632 | *** | CHINA | 58.57 | 22607,21 | *** | ***** | ***** |
2017-09-04 | 8541290000 | COMPONENTS FOR INSTALLATION UNITS telecommunication equipment: TRANSISTOR Power Dissipation 104 W VISHAY INTERTECHNOLOGY VISHAY SIHD5N50D-E3 1 | *** | CHINA | 0 | 1,63 | *** | ***** | ***** |
2017-09-05 | 8541290000 | FETs OPERATING VOLTAGE 30V FET WORKING VOLTAGE 15V: INFINEON TECHNOLOGIES AG WITHOUT TK B / M BSS315PH6327XTSA1 B / M 50 VISHAY INTERTECHNOLOGIES WITHOUT TK B / M SI3437DV-T1-E3 B / M 12 | *** | CHINA | 0.09 | 35,26 | *** | ***** | ***** |
2017-09-05 | 8541290000 | FET TRANSISTORS U431 PRODUCED BY VISHAY is a multifunctional bipolar transistors. ADVANTAGES: LOW OPERATING CURRENT AND LOW VOLTAGE. Apply with automated processing of data, PORTABLE TELECOMMUNICATIONS | *** | UNITED STATES | 0.31 | 8650,7 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Field-effect transistors, power dissipation 104 W, 20 V, semiconductor - silicon are designed for logic circuits to control the parameters of their ENERGY,: VISHAY INTERTECHNOLOGY VISHAY INTERTECHNOLOGY, CHINA SIR440DP-T1-GE3 300 | *** | UNITED STATES | 0.05 | 650,64 | *** | ***** | ***** |
2017-09-05 | 8541290000 | TRANSISTORS EXCEPT phototransistor insulated-gate bipolar transistor (IGBT - INSULATED GATE BIPOLAR TRANSISTORS) - fully controllable semiconductor device, based on three-layer structure. It on and off is carried out | *** | HONG KONG | 0.14 | 35,68 | *** | ***** | ***** |
2017-09-05 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR dissipation of 42W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in a plastic container VISHAY INTERTECHNOLOGY INC. VISHAY IRFR22 | *** | VIETNAM | 0.67 | 194,57 | *** | ***** | ***** |
2017-09-05 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 375VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Trough- packed in plastic trays (trays) INFINEON TECHNOLOGIES AG INFIN | *** | CHINA | 0.05 | 183,76 | *** | ***** | ***** |