DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
---|
2017-11-09 | 8523529001 | BLANK CARDS coated with a special label, whose action is based on an approximation for the production of "smart cards", in NENAREZANYH EFLICTAX HE SCRAP ELECTRIC; | ABSENT | CHINA | 209.46 | 20001,2 | MOSCOW | ***** | ***** |
2017-11-13 | 8534001100 | Blanks for multilayer printed circuit boards, printed circuits without passive and active components, consisting only of the conductive element and contacts NOT SCRAP ELECTRIC EQUIPMENT, ARE NOT hazardous waste: | ABSENT | CHINA | 340.5 | 9733,72 | MOSCOW | ***** | ***** |
2017-11-15 | 8523511000 | Semiconductor RAM, solid-state non-volatile data storage device is a blank, not for secret INFO IS NOT P / E means and / or B / W devices not SODERZH.SREDSTV encryption (CRYPTOGRAPHY), does not contain. | MICRON | CHINA | 2.2 | 13333,23 | MOSCOW | ***** | ***** |
2017-11-15 | 8523511000 | Semiconductor RAM, solid-state non-volatile data storage device is a blank, not for secret INFO IS NOT P / E means and / or B / W devices not SODERZH.SREDSTV encryption (CRYPTOGRAPHY), does not contain. | MICRON | CHINA | 7.7 | 54776,99 | MOSCOW | ***** | ***** |
2017-11-15 | 8523511000 | Semiconductor RAM, solid-state non-volatile data storage device is a blank, not for secret INFO IS NOT P / E means and / or B / W devices not SODERZH.SREDSTV encryption (CRYPTOGRAPHY), does not contain. | MICRON | CHINA | 0.55 | 15479,34 | MOSCOW | ***** | ***** |
2017-11-15 | 8523511000 | Semiconductor RAM, solid-state non-volatile data storage device is a blank, not for secret INFO IS NOT P / E means and / or B / W devices not SODERZH.SREDSTV encryption (CRYPTOGRAPHY), does not contain. | MICRON | CHINA | 12.7 | 35013,44 | MOSCOW | ***** | ***** |
2017-11-15 | 8523511000 | Semiconductor RAM, solid-state non-volatile data storage device is a blank, not for secret INFO IS NOT P / E means and / or B / W devices not SODERZH.SREDSTV encryption (CRYPTOGRAPHY), does not contain. | MICRON | CHINA | 5.5 | 6820,73 | MOSCOW | ***** | ***** |
2017-11-15 | 8523511000 | Semiconductor RAM, solid-state non-volatile data storage device is a blank, not for secret INFO IS NOT P / E means and / or B / W devices not SODERZH.SREDSTV encryption (CRYPTOGRAPHY), does not contain. | MICRON | CHINA | 2.2 | 25308,03 | MOSCOW | ***** | ***** |
2017-11-15 | 8523511000 | Semiconductor RAM, solid-state non-volatile data storage device is a blank, not for secret INFO IS NOT P / E means and / or B / W devices not SODERZH.SREDSTV encryption (CRYPTOGRAPHY), does not contain. | MICRON | CHINA | 2.2 | 30159,59 | MOSCOW | ***** | ***** |
2017-11-15 | 8523511000 | Semiconductor RAM, solid-state non-volatile data storage device is a blank, not for secret INFO IS NOT P / E means and / or B / W devices not SODERZH.SREDSTV encryption (CRYPTOGRAPHY), does not contain. | MICRON | CHINA | 5.5 | 8019,35 | MOSCOW | ***** | ***** |