| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-05 | 8541290000 | TRANSISTORS EXCEPT phototransistor insulated-gate bipolar transistor (IGBT - INSULATED GATE BIPOLAR TRANSISTORS) - fully controllable semiconductor device, based on three-layer structure. It on and off is carried out | *** | HONG KONG | 0.14 | 35,68 | *** | ***** | ***** |
| 2017-09-07 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module SEMIKRON ELEKTRONIK GMBH & CO. KG SEMIKRON SKM100GB1 | *** | GERMANY | 59.14 | 10456,85 | *** | ***** | ***** |
| 2017-09-11 | 8541290000 | TRANSISTORS EXCEPT phototransistor USED IN UNIVERSAL inverters SERVO ACTUATORS AND OTHER CONTROL DEVICES MOTOR-TRANSISTOR DEVICES INTELLIGENT POWER MODULES, SEMICONDUCTOR ON VOLTAGE 1200, amperage of 105 A "SEMIKR | *** | CHINA | 79.9 | 28635,55 | *** | ***** | ***** |
| 2017-09-11 | 8541290000 | Transistors, phototransistor ALSO USED IN UNIVERSAL inverter servo drives and other controllers ENGINES TRANSISTOR DEVICES - INTELLECTUAL the IGBT power modules, solid state, for voltage up to 1200 V, 300 A POWER SUPPLY | *** | CHINA | 174 | 55439,2 | *** | ***** | ***** |
| 2017-09-12 | 8541290000 | Transistor module (IGBT-modules) consist of one insulated-gate bipolar transistor, is used to control in electrical circuits DEVICES industrial automation, power dissipation 0.31 ITC; PRODUCTS ARE PRODUCTS transistor | *** | DOMINICAN REPUBLIC | 51.2 | 14170,57 | *** | ***** | ***** |
| 2017-09-13 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; | FUJI ELECTRIC | *** | 89.35 | 18531,3 | WEITERSTADT | ***** | ***** |
| 2017-09-13 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON | FUJI ELECTRIC | *** | 329.3 | 131293,82 | WEITERSTADT | ***** | ***** |
| 2017-09-13 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 1MBI1500UE-330-E 4 FUJI E | *** | JAPAN | 329.3 | 131293,82 | *** | ***** | ***** |
| 2017-09-13 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module FUJI ELECTRIC FUJI ELECTRIC 2MBI1400VXB-170P-50-M 10 | *** | JAPAN | 89.35 | 18531,3 | *** | ***** | ***** |
| 2017-09-21 | 8541290000 | REMOTE CONTROL DOOR LOCKS FREQUENCY RANGE 433,05-434,79 MHz, 5 MW, FOR PROTECTION OF DEVICES radiosignalizatsii CARS: REMOTE CONTROL '' TOYOTA MOTOR CORPORATION '' TOYOTA NO 8907142050 absence | *** | JAPAN | 0.8 | 399,78 | *** | ***** | ***** |