DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-02 | 8541100009 | DIODES THAN OR photodiode light-emitting diodes (NOT SCRAP ELECTRIC) semiconductor diodes SKN20 / 16, voltage 1200V, 320A CURRENT STRENGTH With different types of conductivity. CONVERTERS FOR A DRIVE DEVICE AUTOMATIC Regula | *** | FINLAND | 0.47 | 67,78 | *** | ***** | ***** |
2017-09-05 | 8541290000 | Transistors, phototransistors NO: MODULE Transistor (two transistors in one case) FOR SWITCHING CONVERTERS LOAD FREQUENCY CURRENTS VLT, in KOMPLEKTK with fasteners, CURRENT 600 A, MODULE FOR SWITCHING TRANSISTOR LOAD CURRENT TRANSDUCERS H | *** | UNITED STATES | 5.03 | 824,61 | *** | ***** | ***** |
2017-09-06 | 8541210000 | P-CHANNEL POWER MOS TRANSISTORS "FDN5618P", C 0.5 Tu power dissipation, drain-source voltage 60 V, gate-source voltage 20B, Imp. Drain current 10A, Predna. FOR A current converters, switches, loads diagram of the control PI: TA | *** | PHILIPPINES | 0.13 | 165 | *** | ***** | ***** |
2017-09-06 | 8541300009 | THYRISTOR 300A / 6500V-100 pieces. Housing height 26mm. APPLY energy converters, and other DC and AC electrical systems of various power. DO NOT CONTAIN COMPONENTS MANUFACTURED FROM SVERHPROVODYASCHIHMATERIALOV. | *** | CHINA | 35.5 | 7320 | *** | ***** | ***** |
2017-09-06 | 8541409000 | ELECTRONIC COMPONENTS FOR GENERAL USE FOR BLOCK ELECTRONIC EQUIPMENT: PROBE (photosensitive semiconductor elements) NOT SCRAP ELECTRIC NOT MILITARY IMAGE CONVERTERS / image sensor CAMERA. | *** | CHINA | 0.01 | 700,5 | *** | ***** | ***** |
2017-09-07 | 8541290000 | Transistor modules, With power dissipation 1W MORE. INTENDED FOR FREQUENCY CONVERTERS, the device speed control motor; TYPE SEMICONDUCTOR SILICON; IGBT-Module SEMIKRON ELEKTRONIK GMBH & CO. KG SEMIKRON SKM100GB1 | *** | GERMANY | 59.14 | 10456,85 | *** | ***** | ***** |
2017-09-07 | 8541100009 | Zener diode. RATED VOLTAGE 3,9-100 V. CURRENT 5-100 MA. Maximum Power Dissipation 1.3 Tues. Used in electrical engineering. DC converters, switching. MAXIMUM forward voltage 1.3 V. The maximum DIRECT CURRENT DIMENSIONS 8 A. 8.76 X 10.54 X 4. | *** | UNITED KINGDOM | 0.03 | 13,12 | *** | ***** | ***** |
2017-09-07 | 8541290000 | Transistors, phototransistor NOT BLOCK transistor (6 pieces) are soldered together for the VLT FREQUENCY CONVERTERS, COMPLETE WITH FIXING, DANFOSS LLC DANFOSS IGBT 176F8631 IGBT 3 | *** | CHINA | 3.92 | 1010,99 | *** | ***** | ***** |
2017-09-08 | 8541290000 | Transistor does not phototransistor: Transistor MODULE FOR VACON FREQUENCY CONVERTERS, power dissipation 4 kW VACON OYJ (VACON PLC) VACON IGBT 181B0427 IGBT 2 | *** | FINLAND | 0.86 | 289,16 | *** | ***** | ***** |
2017-09-08 | 8541290000 | Transistors, phototransistor NOT BLOCK transistors soldered together (NOT phototransistor) for the VLT frequency converters, powerful. DANFOSS A / S DANFOSS IGBT 130B1884 IGBT 3 | *** | CHINA | 0.6 | 220,74 | *** | ***** | ***** |