DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8541290000 | TRANSISTOR SEMICONDUCTOR, SILICON, ZXMP6A17G, drain-source voltage 60V, drain current 4.3a, 3.9VT POWER FOR PROM.SBORKI TV MODELS UE65KS9000UXRU ART: 0505-002790 DIODES LIMITED DIODES 9000 | *** | CHINA | 2.7 | 660,37 | *** | ***** | ***** |
2017-09-01 | 8541290000 | TRANSISTOR SEMICONDUCTOR, SILICON, FCX491A, VOLTAGE KOLLETOR-BASE 40V, collector current of 1A, 1W, TV MODELS FOR PROM.SBORKI UE50MU6100UXRU, ART: 0502-001345 DIODES LIMITED DIODES 4000 | *** | CHINA | 5.4 | 116,82 | *** | ***** | ***** |
2017-09-05 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 3W for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) DIODES INCORPORATED DIODES INCOR | *** | BRAZIL | 0.01 | 51,54 | *** | ***** | ***** |
2017-09-07 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 1,58VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). Packed in plastic bags (scattering of small) DIODES INCORPORATED DIODES IN | *** | HUNGARY | 0.23 | 195,98 | *** | ***** | ***** |
2017-09-07 | 8541290000 | SEMICONDUCTOR TRANSISTORS: MOSFET P-CHANNEL, power dissipation 1.2W, DRAIN-SOURCE VOLTAGE 60 V, the drain current of 7.8 A HULL TYPE 8-SOIC, 6,340,128 CLASSIFICATION CODE FOR PCB RADIO EQUIPMENT DIODES DIODES DM | *** | UNITED KINGDOM | 0.03 | 108,87 | *** | ***** | ***** |
2017-09-08 | 8541290000 | TRANSISTOR SEMICONDUCTOR, SILICON, DMG4435SSS-13, drain-source voltage 30V Drain current 7.3A, power 1.3VT, SIZE 6.0 * 4.9 * 1.75MM FOR PROM.SBORKI TV ART: 0505-003205 DIODES LIMITED DIODES 55000 | *** | CHINA | 12.72 | 2119,32 | *** | ***** | ***** |
2017-09-11 | 8541290000 | Transistors, EXCEPT phototransistor (SCRAP ELECTRIC) CLASSIFICATION CODE 63 4012, SM. ADDITION. TRANSISTORS FOR SEMICONDUCTOR PCB installation GENERAL PURPOSE Power dissipation 1W DIODES OVER MISSING ZXMP6A17E6TA 11 | *** | CHINA | 12.89 | 1946,19 | *** | ***** | ***** |
2017-09-13 | 8541290000 | SEMICONDUCTOR TRANSISTORS FOR GAIN. Generating and converting electrical signals into instrumentation, (NOT SCRAP ELECTRIC): TYPE SEMICONDUCTOR - germanium dioxide (GEO2). Power dissipation 1,08BT DIODES INC ZETEX DMP3098L-July 23 | *** | UNITED STATES | 0.02 | 0,46 | *** | ***** | ***** |
2017-09-14 | 8541290000 | FET TRANSISTOR SEMICONDUCTOR power dissipation 1,25VT for consumer electronics. TYPE SEMICONDUCTOR - single-element (silicon) (NOT SCRAP ELECTRIC). CUT is packaged in blisters Feed DIODES INCORPORATED DIODES INCORPORATED ZX | *** | JAPAN | 0.05 | 54,58 | *** | ***** | ***** |
2017-09-14 | 8541290000 | TRANSISTOR SEMICONDUCTOR, SILICON, DMG4435SSS-13, drain-source voltage 30V Drain current 7.3A, power 1.3VT, SIZE 6.0 * 4.9 * 1.75MM FOR PROM.SBORKI TV ART: 0505-003205 DIODES LIMITED DIODES 35000 | *** | CHINA | 7.8 | 1356,81 | *** | ***** | ***** |