DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, MEMORY 8 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-ELECT | *** | TAIWAN CHINA | 15.58 | 2456,21 | *** | ***** | ***** |
2017-09-07 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, MEMORY 8 MBIT having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-ELECT | *** | TAIWAN CHINA | 38.54 | 5488,97 | *** | ***** | ***** |
2017-09-13 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, FLASH-PROM ES, with a storage capacity of 128 MBIT MODEL S25FL127S, PART S25FL127SABMFI101 - 12 PCS. NOT SCRAP ELECTRIC, DO NOT WASTE. DATA products are used in telecommunications equipment. INDIVIDUAL: LH | *** | TAIWAN CHINA | 0.01 | 40,82 | *** | ***** | ***** |
2017-09-13 | 8542326100 | Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) W25Q64JVSSIQ, VOLUME 64Mbit, 8-pin input voltage 2.7-3.6V, TV MODELS FOR PROM.SBORKI UE43LS003AUXRU, HAS 1107-002574 | *** | TAIWAN CHINA | 1.3 | 684,12 | *** | ***** | ***** |
2017-09-19 | 8542326100 | MONOLITHIC INTEGRATED CIRCUIT FOR PCB radio-electronic means, there is no encryption function (CRYPTOGRAPHY), radiation-NOT, NOT SCRAP ELECTRIC: integrated circuits MONOLITHIC ES FLASH EEPROM memory capacity of 128 Mbits CDF TYPE | *** | TAIWAN CHINA | 0 | 22,67 | *** | ***** | ***** |
2017-09-20 | 8542326100 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 512MEGABIT for wide application in industrial equipment NOT FOR MILITARY | *** | TAIWAN CHINA | 0.28 | 968,28 | *** | ***** | ***** |
2017-09-20 | 8542326100 | Integrated circuits, monolithic, NOT MILITARY NOT SCRAP ELECTRIC: MEMORY CHIPS the SRAM, for PCB PLATY.BEZ CONTENT encryption cryptographic) means. NOT radiation resistant. : Memory chips ALLIANCE. BASES | *** | TAIWAN CHINA | 20.2 | 48410,27 | *** | ***** | ***** |
2017-09-21 | 8542326100 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 1.45 V Operating temperature 0 to + 95 512M: MICRON TECHNOLOGY INC WITHOUT TK B / M MT41K512M16HA-125: A B / M 200 | *** | TAIWAN CHINA | 0.82 | 2508,88 | *** | ***** | ***** |
2017-09-26 | 8542326100 | Integrated circuits, monolithic, NOT MILITARY NOT SCRAP ELECTRIC: MEMORY CHIPS the SRAM, for PCB PLATY.BEZ CONTENT encryption cryptographic) means. NOT radiation resistant. : AS6C8008-55ZIN- MIKROSKHEMAPAMYATI | *** | TAIWAN CHINA | 0.92 | 1977,16 | *** | ***** | ***** |
2017-09-26 | 8542326100 | Integrated circuits, monolithic, NOT MILITARY NOT SCRAP ELECTRIC: MEMORY CHIPS SDRAM, for PCB PLATY.BEZ CONTENT encryption cryptographic) means. NOT radiation resistant. : Memory chips ALLIANCE. OCHO | *** | TAIWAN CHINA | 0.3 | 213,36 | *** | ***** | ***** |