DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-06 | 8542326900 | Integrated circuits - electrically erasable rewritable read-only memory VOLTAGE 2 Operating temperature from - 40 to + 85 MB MEMORY 32: XILINX WITHOUT TK B / M XCF32PVOG48C B / M 120 | *** | TAIWAN CHINA | 0.26 | 1991,39 | *** | ***** | ***** |
2017-09-15 | 8542326900 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES, memory capacity 1 GB, do not have the encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash-electro | *** | TAIWAN CHINA | 33.62 | 11875,8 | *** | ***** | ***** |
2017-09-20 | 8542326900 | Integrated circuits, monolithic, digital, flash electrically erasable programmable read-only memory (flash EEPROM) F59L1G81MA-25TIG2Y, VOLUME 1 Gbit, 48-pin input voltage 2.7-3.6V, SIZE 20 * 12 * 1.2mm FOR PROM.SBORKI TV MODEL 1107 -002459 | *** | TAIWAN CHINA | 41 | 18449,09 | *** | ***** | ***** |
2017-09-29 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 1.45 V Operating temperature from - 40 to + 95 2GB: ALLIANCE MEMORY WITHOUT TK B / M AS4C128M16D3LA-12BIN B / M 18 | *** | TAIWAN CHINA | 0.04 | 152,49 | *** | ***** | ***** |
2017-09-29 | 8542326900 | Electrically erasable rewritable read-only memory in an integrated circuit VOLTAGE 3.6 V Operating temperature from - 40 to + 85 4GB: MICRON WITHOUT TK B / M MT29F4G01ADAGDWB-IT: G B / M 2 | *** | TAIWAN CHINA | 0 | 20,76 | *** | ***** | ***** |
2017-11-12 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 7.29 | 79598,27 | VILNIUS | ***** | ***** |
2017-11-15 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY | TAIWAN CHINA | 28.7 | 11926,84 | TAIPEI | ***** | ***** |
2017-11-17 | 8542326900 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS, ES FLASH EPROM memory capacity C 1Gbps, MODEL W25N01G, PART W25N01GVZEIG - 63 PCS. CUSTOM PACKAGING - Cut Tape. NOT SCRAP ELECTRIC, DO NOT WASTE. APPLY Telecommunication Equip | WINBOND | TAIWAN CHINA | 0.11 | 92,96 | MOSCOW | ***** | ***** |
2017-11-22 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" | ELITE SEMICONDUCTOR MEMORY TECHNOLOGY | TAIWAN CHINA | 22.96 | 8955,41 | TAIPEI | ***** | ***** |
2017-11-27 | 8542326900 | Electronic integrated circuits Monolithic collected, SINGLE: electrically erasable programmable read-only memory (EEPROM FLASH-ES) with a storage capacity of 256 Gbps, DO NOT WASTE NOT | MICRON | TAIWAN CHINA | 8.2 | 105927,68 | VILNIUS | ***** | ***** |