DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) with a storage capacity of 1 Mbit. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): INTEGRATED DEVICE TECHNOLOGY WITHOUT TRADEMARK B / N | *** | CHINA | 0.15 | 1296,84 | *** | ***** | ***** |
2017-09-08 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 1Mbit. Not recorded. SUPPLY VOLTAGE 5V. DIMENSIONS: 21.08 X 10.29 X 2.92MM. ARE NOT CROWBAR electrical equipment, have no function KRI: PT | *** | CHINA | 0 | 7,26 | *** | ***** | ***** |
2017-09-14 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 8Mbit. Not recorded. SUPPLY VOLTAGE 2.4-3.6V. DIMENSIONS: 18.51 X 10.26 X 1MM. ARE NOT CROWBAR ELECTRICAL EQUIPMENT, HAVE FUNKTSIIK: RI | *** | UNITED KINGDOM | 1.18 | 2047,67 | *** | ***** | ***** |
2017-09-14 | 8542324500 | Integrated circuits, electronic, static random access memory (SRAM). MEMORY 8Mbit. Not recorded. SUPPLY VOLTAGE 2.4-3.6V. DIMENSIONS: 18.51 X 10.26 X 1MM. ARE NOT CROWBAR ELECTRICAL EQUIPMENT, HAVE FUNKTSIIK: RI | *** | UNITED KINGDOM | 0.5 | 871,35 | *** | ***** | ***** |
2017-09-21 | 8542324500 | Integrated circuits, monolithic, represents the memory SRAM is approved for use in telecommunications equipment. NOT possess the function of encryption (cryptographic) facilities. NOT AN ELECTRICAL CROWBAR. OBSCHEPROM: TECH | *** | CHINA | 0.3 | 1658,2 | *** | ***** | ***** |
2017-09-27 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) with a storage capacity of 2 Mbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): INTEGRATED DEVICE TECHNOLOGY WITHOUT TRADEMARK B / N | *** | MALAYSIA | 0.82 | 11203,92 | *** | ***** | ***** |
2017-09-27 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) with a storage capacity of 128 kbits. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR WITHOUT TRADEMARK B / N CY7C | *** | TAIWAN CHINA | 0.03 | 241,32 | *** | ***** | ***** |
2017-09-29 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) with a storage capacity of 64 kbps. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): MICROCHIP TECHNOLOGY WITHOUT TRADEMARK B / N 23K640 | *** | CHINA | 0.02 | 21,38 | *** | ***** | ***** |
2017-09-29 | 8542324500 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - static random access memory (SRAM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): CYPRESS SEMICONDUCTOR WITHOUT TRADEMARK B / N CY6214 | *** | CHINA | 0.01 | 19,36 | *** | ***** | ***** |
2017-11-20 | 8542324500 | Electronic integrated circuits, monolithic, not united with the other components, a single, static random access memory (SRAM), memory 9MBIT NOT SCRAP electrical equipment, not for military purposes, intended for mounting | GSI TECHNOLOGY | *** | 1.61 | 5071,9 | ST PETERSBURG | ***** | ***** |