DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): XILINX INC XILINX B / N XCF04SVO20C B / 24 H | *** | CHINA | 0 | 193,49 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) memory 4 C MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): ALTERA CORPORATION ALTERA B / B EPCS4SI8N H / H 5 | *** | MALAYSIA | 0.08 | 188,51 | *** | ***** | ***** |
2017-09-01 | 8542326100 | MICROCIRCUITS MONOLITHIC INTEGRATED ELECTRONIC - configuration memory (FLASH STORAGE DEVICE EEPROM) with a storage capacity of 16 MBIT. (Operating temperature range: -40 ... + 85 ° C) (NO ELECTRICAL SCRAP): ALTERA CORPORATION ALTERA B / N EPCS16SI8N B / N | *** | MALAYSIA | 0.02 | 503,88 | *** | ***** | ***** |
2017-09-01 | 8542326100 | Electronic integrated circuits, electrically erasable programmable ROM (PROM ES) with a storage capacity is limited to 512 MBIT NOT ELECTRICAL JOM, HAS encryption function (CRYPTOGRAPHY) integrated circuit (chip) UCODE7M SER.â„– SL3S1214FUD / BG V V | *** | SINGAPORE | 0.06 | 2724,44 | *** | ***** | ***** |
2017-09-01 | 8542326100 | Integrated circuits, monolithic, MEMORY, FLASH-PROM ES, NOT MORE MEMORY 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INVENTION "SAMSUNG" MIKROSKH.INTEGR.MONOLIT.PEREZAPISYVAEMAYA FLASH EEPROM MEMORY 100KB D / Cond | *** | CHINA | 0.01 | 7,93 | *** | ***** | ***** |
2017-09-03 | 8542326100 | Integrated circuits, monolithic, DIGITAL, MEMORY, FLASH EPROM ES having no encryption function (CRYPTOGRAPHY) NOT SCRAP ELECTRIC, for the industrial assembly TECHNOLOGY "SAMSUNG" Integrated circuits, monolithic, digital, flash electrically erasable PE | *** | KOREA REPUBLIC OF | 1.53 | 410,97 | *** | ***** | ***** |
2017-09-04 | 8542326100 | MONOLITHIC INTEGRATED ELECTRONIC CIRCUITS not integrated with the other components: an electrically erasable programmable read only memory (FLASH-EPROM ES) COLLECTED, SINGLE, with a storage capacity 8 MBIT; NOT SCRAP ELECTRIC:, | *** | GERMANY | 0.13 | 81,01 | *** | ***** | ***** |
2017-09-04 | 8542326100 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 1MEGABIT for wide application in industrial equipment NOT MILITARY DESTINATION | *** | CHINA | 0.01 | 10,05 | *** | ***** | ***** |
2017-09-04 | 8542326100 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 32MEGABIT for wide application in industrial equipment no military NAZ | *** | CHINA | 0.12 | 136,97 | *** | ***** | ***** |
2017-09-05 | 8542326100 | Electronic integrated circuits, electrically erasable programmable ROM (EEPROM), FOR MICROELECTRONICS APPLICATIONS: MICROCHIP FLASH MEMORY INTERFACE WITH SPI, Volume 128 MBIT, encased UDFN-8. SUPPLY VOLTAGE: 1.7 ... 2. WORKING TEMPERATURE: | *** | CHINA | 0.74 | 583,14 | *** | ***** | ***** |