DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-09-01 | 8542326900 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 8192MEGABIT for wide application in industrial equipment NOT WAR H | *** | CHINA | 0.01 | 101,68 | *** | ***** | ***** |
2017-09-04 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 0.8 | 2661,88 | *** | ***** | ***** |
2017-09-04 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 3.75 | 168014,25 | *** | ***** | ***** |
2017-09-04 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT -schemes INTEGRATED REMEMBERING: INTEGRATED CIRCUITS REMEMBERING: an electrically erasable programmable read only memory ES FLASH EPROM memory capacity C -64 Gbit -Flash MEMORY VDIC-NAND HIGH | *** | CHINA | 7.55 | 336118,14 | *** | ***** | ***** |
2017-09-05 | 8542326900 | Electronic integrated circuits, electrically erasable programmable read-only memory (EEPROM), for applications in microelectronics: chip flash memory 1.8V 1G-BIT MICRON TECHNOLOGY INC. 172 MICRON MICRON PC28F00AP30TFA | *** | CHINA | 0.84 | 1189,96 | *** | ***** | ***** |
2017-09-06 | 8542326900 | Integrated circuits - electrically erasable rewritable read-only memory VOLTAGE 2 Operating temperature from - 40 to + 85 MB MEMORY 32: XILINX WITHOUT TK B / M XCF32PVOG48C B / M 120 | *** | TAIWAN CHINA | 0.26 | 1991,39 | *** | ***** | ***** |
2017-09-08 | 8542326900 | Electronic integrated circuits, flash memory, solid, single, not combined with other components not JOM electrical equipment, not for fire control, NOT MILITARY: electrically erasable programmable read-only memories | *** | SINGAPORE | 2.8 | 80899,99 | *** | ***** | ***** |
2017-09-08 | 8542326900 | ES FLASH EPROM MEMORY CAPACITY WITH MORE 512 MBIT: Integrated circuits, electrically erasable FLASH MEMORY MEMORY TYPE: nonvolatile memory MEMORY SIZE: FLASH MEMORY SIZE: 1 GB (8 X 128 M) access time: 30 ns VOLTAGE - POWER 2.7 V ~ 3.6 V MX | *** | MALAYSIA | 0.12 | 117,59 | *** | ***** | ***** |
2017-09-11 | 8542326900 | Integrated circuits: Electronic integrated circuits solid - FLASH electrically erasable programmable read-only memory with a storage capacity 1024MEGABIT for wide application in industrial equipment NOT WAR H | *** | THAILAND | 0.11 | 116,08 | *** | ***** | ***** |
2017-09-11 | 8542326900 | Integrated circuits, monolithic, DIGITAL MEMORY, ES FLASH EPROM MEMORY OVER 512 MBIT having no encryption function (CRYPTOGRAPHY) ELECTRICAL EQUIPMENT NOT SCRAP FOR INDUSTRIAL EQUIPMENT ASSEMBLY "SAMSUNG" MIKROSKH.INTEGR.MONOLIT. PROGRAMMABLE FLASH MEMORY | *** | CHINA | 0.01 | 9,61 | *** | ***** | ***** |