| DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
|---|
| 2017-09-07 | 3818009000 | INP SUBSTRATE disc-shaped, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY INP SUBSTRATE | *** | CHINA | 0.51 | 4453,74 | *** | ***** | ***** |
| 2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.17 | 3617,25 | *** | ***** | ***** |
| 2017-09-08 | 3818009000 | CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 2 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor | *** | CHINA | 0.03 | 1559,25 | *** | ***** | ***** |
| 2017-09-20 | 3818001000 | Silicon wafer polishing, doped monocrystalline, electronics; Packed in CARTRIDGES / PO 25 PCS / VACUUM PACKAGES paved cardboard and foam insert: 6 "(150mm) of the plate (Appendix 85), the conductivity type N, DIAM.150 +/- 0.20 | *** | CHINA | 33.44 | 24076,5 | *** | ***** | ***** |
| 2017-09-23 | 3818009000 | OTHER Chemical elements doped (indium arsenide), intended for use in electronics in the form of discs with a diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box,: idea | *** | CHINA | 5 | 7500 | *** | ***** | ***** |
| 2017-11-03 | 3818001000 | Silicon wafer polishing, doped monocrystalline, electronics; PACKED IN TAPE / FOR 25 PCS / vacuum bags, cardboard, and pave the foam insert: | MCL ELECTRONIC MATERIALS, LTD | CHINA | 56.238 | 34398 | MOSCOW | ***** | ***** |
| 2017-11-08 | 3818001000 | Silicon is alloyed, purity, single-crystal, plate-shaped, polished, for use in microelectronics: | MCL | CHINA | 139.05 | 79916,75 | MOSCOW | ***** | ***** |
| 2017-11-08 | 3818009000 | CHEMICAL COMPOUNDS doped for use in electronics - epitaxial wafers: 2-inch GREEN INGAN, WAVELENGTH 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 MCD - 2 PCS. Epitaxial CM. complete | ABSENT | CHINA | 0.16 | 1162,07 | Maanshan | ***** | ***** |
| 2017-11-12 | 3818009000 | The substrate in the form of a disk, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY / | AXT | CHINA | 19.273 | 24236,62 | FREMONT | ***** | ***** |
| 2017-11-12 | 3818001000 | Silicon wafer polishing, doped monocrystalline, electronics; PACKED IN TAPE / FOR 25 PCS / vacuum bags, cardboard, and pave the foam insert: | MCL ELECTRONIC MATERIALS, LTD | CHINA | 15.372 | 15400 | MOSCOW | ***** | ***** |