Electro Import Data of Russia

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Find trade data and market research report on electro imports under HS Code 3818009000 and follow up market price of electros. Know market share of companies importing electro under HS Code 3818009000

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DATE	HS_CODE	Product Description	Trademark	Country	Net Weight	Statistical Cost	Place	Shipper Name	Consignee Name
2017-09-07	3818009000	INP SUBSTRATE disc-shaped, doped for further use in the process of growing (Production) epitaxial heterostructures INSTALLATION MOCVD: for the microelectronics industry / NOT MILITARY INP SUBSTRATE	***	CHINA	0.51	4453,74	***	*****	*****
2017-09-08	3818009000	CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 3 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor	***	CHINA	0.17	3617,25	***	*****	*****
2017-09-08	3818009000	CHEMICAL COMPOUNDS Alloy: SEMICONDUCTOR SUBSTRATE FROM indium phosphide, N-TYPE, doped with sulfur to the circular plate, 2 inch diameter. Used to build electronic equipment, for the subsequent manufacture of diodes and: Transistor	***	CHINA	0.03	1559,25	***	*****	*****
2017-09-11	3818009000	CHEMICAL COMPOUNDS DOPED: semiconductor epitaxial layer structure of gallium nitride semi-insulating substrate silicon carbide circular plate with a diameter of 3 inches. It used to build electronic equipment, FOR: FOLLOW	***	JAPAN	1.8	14024,16	***	*****	*****
2017-09-12	3818009000	A semiconductor wafer of gallium arsenide-SHAPED discs with a diameter of 50.8 MM is intended for use as a raw material for the manufacture of semiconductor devices ELECTRONICS by spraying and superfine ultrapure semiconductors	***	UNITED STATES	1.35	1278,38	Vilnius Lithuania	*****	*****
2017-09-22	3818009000	EPITAXIAL plate consisting of a substrate GAAS (gallium arsenide), doped silicon (SI) (less than 0.003%) C applied layers ALGAINP, doped SI (silicon) and MG (magnesium) FOR USE IN ELECTRONICS MANUFACTURING IN EPITAXIAL PLATE (D	***	TAIWAN CHINA	17.09	86690,92	***	*****	*****
2017-09-23	3818009000	OTHER Chemical elements doped (indium arsenide), intended for use in electronics in the form of discs with a diameter 34 mm, 2 mm thick, each disc is packaged in individual packaging, paper-wrapped, folded into individual box,: idea	***	CHINA	5	7500	***	*****	*****
2017-11-07	3818009000	CHEMICAL COMPOUNDS Alloy: a semiconductor substrate of gallium arsenide, ligated silicon, the conductivity type N, the circular plate 2 inch diameter (50.8 mm), thickness 350 microns, INTENDED FOR USE IN MICROELECTRONICS	WITHOUT A TRADEMARK	***	0.272	5145	ST PETERSBURG	*****	*****
2017-11-08	3818009000	CHEMICAL COMPOUNDS doped for use in electronics - epitaxial wafers: 2-inch GREEN INGAN, WAVELENGTH 525 + 4 nm, thickness = 100 +/- 10 microns, the luminescence intensity> 280 MCD - 2 PCS. Epitaxial CM. complete	ABSENT	CHINA	0.16	1162,07	Maanshan	*****	*****
2017-11-10	3818009000	Chemical elements doped for use in electronics, in the form of discs	OMMIC	FRANCE	1.5	45583,93	MOSCOW	*****	*****

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Our electro import data of Russia and market research report covers market priceof electro and market share of Russian companies. This helps you to do market analysis on the basis of price, company, etc. efficiently and gain knowledge on market size of electro in Russia. Few shipment records with a small number of important columns from Russia import data of electro are given above. Other hidden fields such as Russian Importer Name with Address, Foreign Importer Name with Address, Value, Quantity, Origin & Destination Country and more are also covered in Russia customs data of electro. To view more shipment records of electro import data of Russia, you can set a filter by Country Name, HS Code and Place.

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