DATE | HS_CODE | Product Description | Trademark | Country | Net Weight | Statistical Cost | Place | Shipper Name | Consignee Name |
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2017-11-01 | 8541100009 | SILICON DIODES ARE two-electrode device with one PN-transitions. NOT is a light emitting. Used in the manufacture of electronic equipment, GENERAL PURPOSE ARE NOT diode grounders. TOTAL 2737 PCS. TO P | ABSENT | CHINA | 2.737 | 255,64 | SHENZHEN | ***** | ***** |
2017-11-01 | 8541290000 | TRANSISTORS PURPOSE. Designed for use in amplifiers and generators of electronic devices. Power dissipation 10 Tues. Not for military purposes. HAVE encryption means (CRYPTOGRAPHY) only 8 pieces. | ABSENT | CHINA | 1.6 | 893,46 | SHENZHEN | ***** | ***** |
2017-11-01 | 8541100009 | SILICON DIODES ARE two-electrode device with one PN-transitions. NOT is a light emitting. Used in the manufacture of electronic equipment, GENERAL PURPOSE ARE NOT diode grounders. TOTAL 2369 PCS. ON ON | ABSENT | CHINA | 1.135 | 118,07 | SHENZHEN | ***** | ***** |
2017-11-03 | 8541600000 | The quartz resonator, is a semiconductor DEVICE WHERE piezoelectric effect and the phenomenon of mechanical resonance is used to build a high-resonant elements electronic circuit, namely INTENDED | SJK | CHINA | 65 | 4063,94 | SHENZHEN | ***** | ***** |
2017-11-04 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: | DIODES | CHINA | 0.009 | 2,43 | SHENZHEN | ***** | ***** |
2017-11-04 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: | NXP | CHINA | 0.056 | 3,37 | SHENZHEN | ***** | ***** |
2017-11-04 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: | PANJIT | CHINA | 0.039 | 19,85 | SHENZHEN | ***** | ***** |
2017-11-04 | 8541100009 | SEMICONDUCTOR DIODES FOR PCB, FOR USE IN RADIO ELECTRONIC APPARATUS SHALL CREATE ELECTROMAGNETIC INTERFERENCE: | VISHAY | CHINA | 0.078 | 11,74 | SHENZHEN | ***** | ***** |
2017-11-04 | 8541210000 | SEMICONDUCTOR TRANSISTORS dissipation of less than 1W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: | FAIRCHILD | CHINA | 0.224 | 143,14 | SHENZHEN | ***** | ***** |
2017-11-04 | 8541290000 | SEMICONDUCTOR TRANSISTORS Power Dissipation 1 W, for mounting on printed circuit boards for use in radio electronics, SHALL CREATE ELECTROMAGNETIC INTERFERENCE: | IOR | CHINA | 0.02 | 7,2 | SHENZHEN | ***** | ***** |